HEXFET Power MOSFET plus Schottky Diode

Description The IRF8306MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout

文件：280.52 Kbytes 页数：9 Pages

IRF

HEXFET Power MOSFET plus Schottky Diode

Description The IRF8306MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout

文件：280.52 Kbytes 页数：9 Pages

IRF

Integrated Monolithic Schottky Diode

文件：266.91 Kbytes 页数：10 Pages

IRF

Integrated Monolithic Schottky Diode

文件：266.91 Kbytes 页数：10 Pages

IRF

30V 单 N 通道 HEXFET 功率 MOSFET 和肖特基二极管，采用 DirectFET MX 封装，额定电流为 23 安培，具有低导通电阻。

\n优势:\n• 符合 RoHS\n• 纤薄外形（小于0.7毫米）\n• 双面冷却\n• 低通态损耗\n• 针对高频开关进行了优化\n• 低封装电感\n• 集成单片肖特基二极管;

Infineon

英飞凌