DirectFET

Power MOSFET

Description The IRF8301MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve very low on-state resistance in a package that has the footprint of an SO-8 or a PQFN 5x6mm and only 0.7mm profile. The DirectFET package is compatible with e

文件：344.2 Kbytes 页数：10 Pages

IRF

DirectFET

Power MOSFET

Description The IRF8301MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve very low on-state resistance in a package that has the footprint of an SO-8 or a PQFN 5x6mm and only 0.7mm profile. The DirectFET package is compatible with e

文件：344.2 Kbytes 页数：10 Pages

IRF

Ultra-low Package Inductance

文件：344.2 Kbytes 页数：10 Pages

IRF

Ultra-low Package Inductance

文件：344.2 Kbytes 页数：10 Pages

IRF

采用 DirectFET ™ MT 封装的 30V 单 N 通道 StrongIRFET ™功率 MOSFET

\n优势:\n• Optimized for broadest availability from distribution partners\n• Product qualification according to JEDEC standard\n• Optimized for 5V gate-drive voltage (called Logic level)\n• Dual-side cooling capability\n• Low package height of 0.7mm\n• Low parasitic (1-2 nH) inductance package\n• 100&;

Infineon

英飞凌