IRF821

N-CHANNEL Enhancement-Mode Silicon Gate TMOS

PowerFieldEffectTransistor N-ChannelEnhancement-ModeSiliconGateTMOS TMOSPOWERFETs2and2.5AMPERESrDS(on)=3OHM450and500VOLTS rDS(on)=4OHM450VOLTS

IRF821

N-CHANNEL POWER MOSFETS

FEATURES ●LowerRDS(ON) ●Improvedinductiveruggedness ●Fastswitchingtimes ●Ruggedpolysilicongatecellstructure ●Lowerinputcapacitance ●Extendedsafeoperatingarea ●Improvedhightemperaturereliability

IRF821

N-Channel Power MOSFETs, 3.0 A, 450 V/500 V

IRF821

isc N-Channel MOSFET Transistor

IRF821

N-Channel Power MOSFETs

IRFS821

iscN-ChannelMOSFETTransistor

IRFS821

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=2.0A@TC=25℃ ·DrainSourceVoltage-VDSS=450V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

KA821

Thermocouples

KLM-821G

LightEmittingDiode(GaN)

LightEmittingDiode(GaN) KLM-821Ghasa1WHighpowerGaNgreenLEDandhastheoptimizedopticalcharacteristics. Features •Lowforwardvoltageoperated •MoreEnergyEfficientthanincandescentand mosthalogenlampes Applications •Portableflashlight •Bollards,Security,Gardenlig

KM821K

R.F.MoldedChokes

[OhmiteMfg.Co.]