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IRF820S

Dynamic dV/dt rating

DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die size up to HEX-4. It prov

文件:183.24 Kbytes 页数:8 Pages

VishayVishay Siliconix

威世科技

IRF820S

Power MOSFET

FEATURES • Surface mount • Available in tape and reel • Dynamic dV/dt rating • Repetitive avalanche rated • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datashee

文件:238.32 Kbytes 页数:10 Pages

VishayVishay Siliconix

威世科技

IRF820S

Power MOSFET(Vdss=500V, Rds(on)=3.0ohm, Id=2.5A)

DESCRIPTION Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. • Surface Mount • Available in Tape & Reel • Dynamic dV/dt Rating • Repetitive Avalanche

文件:172.4 Kbytes 页数:6 Pages

IRF

IRF820S_V01

Power MOSFET

FEATURES • Surface mount • Available in tape and reel • Dynamic dV/dt rating • Repetitive avalanche rated • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datashee

文件:238.32 Kbytes 页数:10 Pages

VishayVishay Siliconix

威世科技

IRF820SPBF

HEXFET짰 Power MOSFET

文件:319.03 Kbytes 页数:9 Pages

IRF

IRF820SPBF

Power MOSFET

文件:238.32 Kbytes 页数:10 Pages

VishayVishay Siliconix

威世科技

IRF820STRLPBFA

Power MOSFET

文件:238.32 Kbytes 页数:10 Pages

VishayVishay Siliconix

威世科技

IRF820STRRPBFA

Power MOSFET

文件:238.32 Kbytes 页数:10 Pages

VishayVishay Siliconix

威世科技

IRF820S

Power MOSFET

Surface mount\nAvailable in tape and reel\nDynamic dV/dt rating;

Vishay

威世科技

IRF820S

Power MOSFET(Vdss=500V, Rds(on)=3.0ohm, Id=2.5A)

Infineon

英飞凌

详细参数

  • 型号:

    IRF820S

  • 功能描述:

    MOSFET N-Chan 500V 2.5 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
IR
22+
D2-PAK
9450
原装正品,实单请联系
询价
IR
24+
TO-263
501320
免费送样原盒原包现货一手渠道联系
询价
IR
2015+
D2-Pak
12500
全新原装,现货库存长期供应
询价
IR
24+
D2-Pak
8866
询价
IR
23+
TO-263
11846
一级代理商现货批发,原装正品,假一罚十
询价
IR/VISHAY
20+
TO263
36900
原装优势主营型号-可开原型号增税票
询价
IR/VISHAY
23+
TO-263
50000
全新原装正品现货,支持订货
询价
IR
2447
D2-PAK
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
VISHAY
25+
TO-263
3000
就找我吧!--邀您体验愉快问购元件!
询价
IR
23+
TO-263-2
50000
全新原装正品现货,支持订货
询价
更多IRF820S供应商 更新时间2025-9-30 15:44:00