IRF820B中文资料仙童半导体数据手册PDF规格书
IRF820B规格书详情
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies, power factor correction and electronic lamp ballasts based on half bridge.
Features
• 2.5A, 500V, RDS(on) = 2.6Ω @VGS = 10 V
• Low gate charge ( typical 14 nC)
• Low Crss ( typical 10 pF)
• Fast switching
• 100 avalanche tested
• Improved dv/dt capability
产品属性
- 型号：
IRF820B
- 功能描述：
MOSFET 500V N-Channel B-FET
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
24+ |
NA/ |
3750 |
原装现货,当天可交货,原型号开票 |
询价 | ||
IR/VISHAY |
22+ |
TO-220 |
100000 |
代理渠道/只做原装/可含税 |
询价 | ||
FAIRCHILD |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
IR/ST/仙童 |
23+ |
TO-220 |
3000 |
全新原装 |
询价 | ||
仙童 |
06+ |
TO-220 |
5000 |
原装 |
询价 | ||
fsc |
2023+ |
原厂封装 |
50000 |
原装现货 |
询价 | ||
FSC |
1950+ |
TO-220 |
9852 |
只做原装正品现货!或订货假一赔十! |
询价 | ||
fsc |
24+ |
N/A |
6980 |
原装现货,可开13%税票 |
询价 | ||
FAIRCHILD |
23+ |
TO-220 |
9526 |
询价 | |||
VishayIR |
24+ |
TO-262 |
336 |
询价 |
