Power MOSFET(Vdss = 40 V)

Benefits ● Very Low RDS(on) at 4.5V VGS ● Low Gate Charge ● Fully Characterized Avalanche Voltage and Current Applications ● Synchronous MOSFET for Notebook Processor Power ● Secondary Synchronous Rectification for Isolated DC-DC Converters ● Synchronous Fet for Non-Isolated

文件：179.74 Kbytes 页数：9 Pages

IRF

N-ch 40V Fast Switching MOSFETs

Features Advanced Trench MOS Technology Low Gate Charge Fast Switching Speed 100% EAS Guaranteed Green Device Available Applications Power Management in Desktop Computer or DC/DC Converters. Isolated DC/DC Converters in Telecom and Industrial.

文件：724.16 Kbytes 页数：4 Pages

EVVOSEMI

翊欧

Synchronous MOSFET for Notebook Processor Power

文件：185.33 Kbytes 页数：9 Pages

IRF

HEXFET Power MOSFET

文件：162.92 Kbytes 页数：9 Pages

IRF

Synchronous MOSFET for Notebook Processor Power

文件：225.92 Kbytes 页数：10 Pages

IRF

Synchronous MOSFET for Notebook Processor Power

文件：225.92 Kbytes 页数：10 Pages

IRF

Synchronous MOSFET for Notebook Processor Power

文件：185.33 Kbytes 页数：9 Pages

IRF

N-Channel 40-V (D-S) MOSFET

文件：1.99547 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

采用 SO-8 封装的 40V 单 N 通道 HEXFET 功率 MOSFET

\n优势:\n• 符合 RoHS\n• 具有业内先进的品质\n• 低RDS(ON) @ 4.5V VGS\n• 经过充分验证的雪崩电压和电流\n• 超低的栅极阻抗;

Infineon

英飞凌