Power MOSFET(Vdss=60V)

Benefits ● Low Gate to Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters

文件：209.14 Kbytes 页数：8 Pages

IRF

N-Ch 60V Fast Switching MOSFETs

100% EAS Guaranteed Green Device Available Super Low Gate Charge ExcellentCdV/dt effect decline Advanced high cell density Trench technology

文件：491.21 Kbytes 页数：4 Pages

EVVOSEMI

翊欧

采用 SO-8 封装的 60V 单 N 通道 HEXFET 功率 MOSFET

\n优势:\n• 符合 RoHS\n• 具有业内先进的品质\n• 快速开关\n• 纤薄外形（小于1.1毫米）\n• SOT-23 封装;

Infineon

英飞凌

SMPS MOSFET

Benefits ● Low Gate to Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters ● Lead-Free

文件：128.38 Kbytes 页数：8 Pages

IRF

High frequency DC-DC converters

Benefits ● Low Gate to Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters ● Lead-Free

文件：133.78 Kbytes 页数：8 Pages

IRF

Advanced Process Technology

Description These HEXFET Power MOSFETs are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. The efficient SO-8 pa

文件：194.6 Kbytes 页数：9 Pages

IRF

SMPS MOSFET

Description These HEXFET Power MOSFETs are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. The efficient SO-8 pa

文件：214.59 Kbytes 页数：8 Pages

IRF

Advanced Process Technology

Description These HEXFET Power MOSFETs are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. The efficient SO-8 pa

文件：194.6 Kbytes 页数：9 Pages

IRF

High frequency DC-DC converters

Benefits ● Low Gate to Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters ● Lead-Free

文件：133.78 Kbytes 页数：8 Pages

IRF

High frequency DC-DC converters

文件：133.78 Kbytes 页数：8 Pages

IRF