Generation V Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

文件：202.97 Kbytes 页数：9 Pages

IRF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipati

文件：135.63 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件：157.74 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世威世科技公司

HEXFET POWER MOSFET

文件：921.18 Kbytes 页数：7 Pages

IRF

10A,400V Heatsink N-Channel Type Power MOSFET

文件：914.96 Kbytes 页数：6 Pages

THINKISEMI

思祁半导体

HEXFET Power MOSFET

文件：3.41629 Mbytes 页数：6 Pages

KERSEMI

Power MOSFET

文件：157.74 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世威世科技公司

MOS(场效应管)

Vishay

威世

10A,400V Heatsink N-Channel Type Power MOSFET

ThinkiSemi

思祁半导体

HEXFET POWER MOSFET

Infineon

英飞凌