HEXFET Power MOSFET ( VDSS = -20V , RDS(on) = 0.040廓 )

Description These HEXFET® Power MOSFETs in package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFETs are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanch

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IRF

HEXFET Power MOSFET ( VDSS = -20V , RDS(on) = 0.040Ω )

Infineon

英飞凌

P-Channel MOSFET

Features ® VDs (VE-55V ® Rps(ON)

文件：394.78 Kbytes 页数：8 Pages

UMW

友台半导体

P-Channel MOSFET

Features VDs (V=-55V RDs(oN)

文件：376.09 Kbytes 页数：8 Pages

EVVOSEMI

翊欧

generation v technology

文件：237.78 Kbytes 页数：10 Pages

IRF