High frequency DC-DC converters

Benefits ● Low Gate to Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters

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IRF

80V 双 N 通道 HEXFET Power MOSFET, 采用 SO-8 封装

\n优势:\n• 符合 RoHS\n• 经过充分验证的雪崩电压和电流\n• 低栅漏电荷，可降低开关损耗\n• 经过充分验证的的电容，包括有效的Coss以简化设计\n• 双 N 通道 MOSFET;

Infineon

英飞凌

HEXFET짰Power MOSFET

Benefits ● Low Gate to Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters ● Lead-Free

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IRF

HEXFET짰Power MOSFET

Description Additional features of These HEXFET Power MOSFETs are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.

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IRF

High frequency DC-DC converters

Benefits ● Low Gate to Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters ● Lead-Free

文件：232.31 Kbytes 页数：8 Pages

IRF

High frequency DC-DC converters Lead-Free

文件：229.04 Kbytes 页数：8 Pages

IRF

High frequency DC-DC converters

文件：232.42 Kbytes 页数：8 Pages

IRF

High frequency DC-DC converters Lead-Free

文件：229.04 Kbytes 页数：8 Pages

IRF

High frequency DC-DC converters

文件：232.42 Kbytes 页数：8 Pages

IRF

Industry-standard pinout SO-8 Package

文件：210.91 Kbytes 页数：9 Pages

IRF