首页 >IRF7350TRPBF>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
IRF7350TRPBF | Ultra Low On-Resistance Description ThesedualNandPchannelHEXFET®powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFET®powerMOSFETsar | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | |
CommonModeInductors/EMIFilters | BournsBourns Inc. 伯恩斯（邦士） | Bourns | ||
astep-downconverterwithintegratedswitchingMOSFET | ADTECHADTech ADTech | ADTECH | ||
150mAULTRA-LOWQUIESCENTCURRENTLDOwithENABLE Features LowVINandWideVINRange:2.0Vto5.25V GuaranteeOutputCurrent,150mA OutputVoltageRange:1.2Vto4.5V VOUTAccuracy:±1 QuiescentCurrentasLowas0.25μA TypicalStandbyCurrent0.02μA ESDProtectionExceedsJESD22 Exceeds4000VHumanBodyModel(A114) Exceeds400VM | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
LTCCBandpassFilter | MINIMini-Circuits 微型电路 | MINI | ||
LTCCBandpassFilter | MINIMini-Circuits 微型电路 | MINI | ||
LTCCBandpassFilter | MINIMini-Circuits 微型电路 | MINI | ||
RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
?곭탡?덃끝雍멨눣?㎩댍IC | BOWIN BOWIN ELECTRONIC CO. | BOWIN | ||
DualEnhancementModeFieldEffectTransistor(NandPChannel) FEATURES ■100V,2.6A,RDS(ON)=190mΩ@VGS=10V. ■-100V,-2.0A,RDS(ON)=320mΩ@VGS=-10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET | ||
DualEnhancementModeFieldEffectTransistor(NandPChannel) FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. 100V,2.6A,RDS(ON)=190mW@VGS=10V. -100V,-2.0A,RDS(ON)=320mW@VGS=-10V. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
DualEnhancementModeFieldEffectTransistor(NandPChannel) FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. 100V,2.6A,RDS(ON)=190mW@VGS=5V. -100V,-2.0A,RDS(ON)=320mW@VGS=-10V. RDS(ON)=180mW@VGS=10V. Lead-freeplating;RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelandP-ChannelMOSFETuseadvancedtrenchTechnology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半导体有限公司 | DOINGTER | ||
DualEnhancementModeFieldEffectTransistor FEATURES ■100V,2.6A,RDS(ON)=190mΩ@VGS=5V. RDS(ON)=180mΩ@VGS=10V. ■-100V,-2.0A,RDS(ON)=320mW@VGS=-10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■SurfacemountPackage. ■Lead-freeplati | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET | ||
TheLittelfuseCG7seriesGDTisaminiaturesurfacemountdevicewitha1kA8/20關Ssurgerating | LittelfuseLittelfuse Inc. 力特力特公司 | Littelfuse | ||
73Series-IP68WaterproofEnclosure ProductOverview •IP68highperformanceplasticenclosureprotectedfromimmersionaslong as24hoursat1mdepth •ASAmaterialisresistanttodeteriorationanddiscolourationfromultraviolet rays.Perfectforuseasoutdoorcommunicationandnetworkdevices •Withasiliconewaterpr | CAMDENBOSS CamdenBoss Ltd. | CAMDENBOSS | ||
DualEnhancementModeFieldEffectTransistor N-channel:VOLTAGE100VoltsCURRENT2.6Ampere P-channel:VOLTAGE100VoltsCURRENT2.0Ampere FEATURE *Smallflatpackage.(SO-8) *SuperhighdensecelldesignforextremelylowRDS(ON). *Leadfreeproductisacquired. *Highpowerandcurrenthandingcapability. APPLICATION *Servo | CHENMKOCHENMKO CHENMKO | CHENMKO | ||
T-13/4MidgetGrooveBase ComingSoon. Ifyouhavesomeinformationonrelatedparts,pleaseshareusefulinformationbyaddinglinksbelow. | CMLCML CML | CML | ||
MidgetGrooveBase | VCC Visual Communications Company | VCC | ||
10-OUTPUTCONTROLLERIC | BOWIN BOWIN ELECTRONIC CO. | BOWIN |
详细参数
- 型号：
IRF7350TRPBF
- 功能描述：
MOSFET MOSFT DUAL N/PCh 100V 2.1A
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
14+ |
SOP8 |
25000 |
原装进口现货,假一罚十 |
询价 | ||
IR |
2021+ |
SOP8 |
8903 |
诚信经营..品质保证..价格优势 |
询价 | ||
IR |
22+ |
SOP-8 |
9800 |
只做原装正品假一赔十!正规渠道订货! |
询价 | ||
Bychip |
23+ |
SOP8 |
10000 |
高品质替代,技术支持,参数选型 |
询价 | ||
IR |
08+ |
SOP8 |
3300 |
全新原装现货绝对自己公司特价库 |
询价 | ||
IR |
23+ |
PLCC28 |
18000 |
询价 | |||
IOR |
07+ |
SOP |
2200 |
询价 | |||
IR |
23+ |
SOP8 |
9896 |
询价 | |||
IR |
0823+ |
SO8 |
2725 |
现货原装库存热卖 |
询价 | ||
IOR |
23+ |
SOP-8 |
121000 |
全新原装现货 |
询价 |
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