Power MOSFET(Vdss=-100V)

Description These dual N and P channel HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs ar

文件：238.11 Kbytes 页数：16 Pages

IRF

Power MOSFET(Vdss=-100V)

Infineon

英飞凌

HEXFET짰 Power MOSFET

Description These dual N and P channel HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs ar

文件：308.45 Kbytes 页数：16 Pages

IRF

Ultra Low On-Resistance

Description These dual N and P channel HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs ar

文件：314.12 Kbytes 页数：16 Pages

IRF

Ultra Low On-Resistance

Description These dual N and P channel HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs ar

文件：314.12 Kbytes 页数：16 Pages

IRF