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IRF730ASLPBF

HEXFET Power MOSFET (SMPS MOSFET)

Applications •SwitchModePowerSupply(SMPS) •UninterruptablePowerSupply •Highspeedpowerswitching •Lead-Free Benefits •LowGateChargeQgresultsinSimpleDriveRequirement •ImprovedGate,Avalancheanddynamicdv/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheV

IRF

International Rectifier

IRF730ASPBF

HEXFETPowerMOSFET(SMPSMOSFET)

Applications •SwitchModePowerSupply(SMPS) •UninterruptablePowerSupply •Highspeedpowerswitching •Lead-Free Benefits •LowGateChargeQgresultsinSimpleDriveRequirement •ImprovedGate,Avalancheanddynamicdv/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheV

IRF

International Rectifier

IRF730ASPBF

PowerMOSFET

FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossSpecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowe

VishayVishay Siliconix

威世科技威世科技半导体

IRF730ASPBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半导体

IRF730ASTRL

PowerMOSFET

FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossSpecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowe

VishayVishay Siliconix

威世科技威世科技半导体

IRF730ASTRLPBF

PowerMOSFET

FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossSpecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowe

VishayVishay Siliconix

威世科技威世科技半导体

IRF730ASTRLPBFA

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半导体

IRF730ASTRRPBF

PowerMOSFET

FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossSpecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowe

VishayVishay Siliconix

威世科技威世科技半导体

IRF730B

400VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IRF730B

LowAreaSpecificOn-Resistance

FEATURES •OptimalDesign -LowAreaSpecificOn-Resistance -LowInputCapacitance(Ciss) -ReducedCapacitiveSwitchingLosses -HighBodyDiodeRuggedness -AvalancheEnergyRated(UIS) •OptimalEfficiencyandOperation -LowCost -SimpleGateDriveCircuitry

VishayVishay Siliconix

威世科技威世科技半导体

IRF730B

400VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan

KERSEMI

Kersemi Electronic Co., Ltd.

IRF730B

N-ChannelMOSFETTransistor

DESCRIPTION •DrainCurrent–ID=5.5A@TC=25℃ •DrainSourceVoltage- :VDSS=400V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=1.0Ω(Max) •FastSwitchingSpeed APPLICATIONS •Designedespeciallyforhighvoltage,highspeedapplications, suchasoff-lineswitchingpowers

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRF730B

DSeriesPowerMOSFET

FEATURES •OptimalDesign -LowAreaSpecificOn-Resistance -LowInputCapacitance(Ciss) -ReducedCapacitiveSwitchingLosses -HighBodyDiodeRuggedness -AvalancheEnergyRated(UIS) •OptimalEfficiencyandOperation -LowCost -SimpleGateDriveCircuitry -LowFigure-of-Merit(

VishayVishay Siliconix

威世科技威世科技半导体

IRF730F

6.0A,400V,1.0廓N-CHANNELPOWERMOSFET

DESCRIPTION ➤IRF730is400VHighvoltageN-Channelenhancement modepowerMOS-FETchipfabricatedinadvanced siliconepitaxialplanartechnology; ➤Advancedterminationschemetoprovideenhancedvoltage-blockingcapability; ➤AvalancheEnergySpecified; ➤Source-to-DrainDiodeRecov

FS

First Silicon Co., Ltd

IRF730FI

iscN-ChannelMOSFETTransistor

DESCRIPTION •DrainCurrent–ID=3.5A@TC=25℃ •DrainSourceVoltage- :VDSS=400V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=1.0Ω(Max) •FastSwitchingSpeed APPLICATIONS •Designedespeciallyforhighvoltage,highspeedapplications, suchasoff-lineswitchingpowersu

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRF730FP

6.0A400VNCHANNELPOWERMOSFET

FCIFirst Components International

戈采戈采企业股份有限公司

IRF730PBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati

VishayVishay Siliconix

威世科技威世科技半导体

IRF730PBF

HEXFETPowerMOSFET

IRF

International Rectifier

IRF730PBF

6.5A,400VHeatsinkN-ChannelTypePowerMOSFET

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半导体思祁半导体有限公司

IRF730PBF

PowerMOSFET

FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinformationaboutpartsthatare RoH

VishayVishay Siliconix

威世科技威世科技半导体

供应商型号品牌批号封装库存备注价格
IRF
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
IR
22+23+
TO-263
28849
绝对原装正品全新进口深圳现货
询价
IR/VISH
21+
65230
询价
IR
23+
TO-263
30000
全新原装现货,价格优势
询价
IR
23+
TO-263
50000
全新原装正品现货,支持订货
询价
VI1
2021+
SMD
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
VISHAY
1809+
TO-263
1675
就找我吧!--邀您体验愉快问购元件!
询价
IR
1923+
TO-263
6896
原装进口现货库存专业工厂研究所配单供货
询价
IR
23+
TO-263
50000
全新原装正品现货,支持订货
询价
VB
21+
D2PAK
10000
原装现货假一罚十
询价
更多IRF730ASLPBF供应商 更新时间2024-9-21 8:02:00