首页 >IRF730ASLPBF>规格书列表
零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
IRF730ASLPBF | HEXFET Power MOSFET (SMPS MOSFET) Applications •SwitchModePowerSupply(SMPS) •UninterruptablePowerSupply •Highspeedpowerswitching •Lead-Free Benefits •LowGateChargeQgresultsinSimpleDriveRequirement •ImprovedGate,Avalancheanddynamicdv/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheV | IRF International Rectifier | IRF | |
HEXFETPowerMOSFET(SMPSMOSFET) Applications •SwitchModePowerSupply(SMPS) •UninterruptablePowerSupply •Highspeedpowerswitching •Lead-Free Benefits •LowGateChargeQgresultsinSimpleDriveRequirement •ImprovedGate,Avalancheanddynamicdv/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheV | IRF International Rectifier | IRF | ||
PowerMOSFET FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossSpecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowe | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PowerMOSFET FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossSpecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowe | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PowerMOSFET FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossSpecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowe | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PowerMOSFET FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossSpecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowe | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
400VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
LowAreaSpecificOn-Resistance FEATURES •OptimalDesign -LowAreaSpecificOn-Resistance -LowInputCapacitance(Ciss) -ReducedCapacitiveSwitchingLosses -HighBodyDiodeRuggedness -AvalancheEnergyRated(UIS) •OptimalEfficiencyandOperation -LowCost -SimpleGateDriveCircuitry | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
400VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
N-ChannelMOSFETTransistor DESCRIPTION •DrainCurrent–ID=5.5A@TC=25℃ •DrainSourceVoltage- :VDSS=400V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=1.0Ω(Max) •FastSwitchingSpeed APPLICATIONS •Designedespeciallyforhighvoltage,highspeedapplications, suchasoff-lineswitchingpowers | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
DSeriesPowerMOSFET FEATURES •OptimalDesign -LowAreaSpecificOn-Resistance -LowInputCapacitance(Ciss) -ReducedCapacitiveSwitchingLosses -HighBodyDiodeRuggedness -AvalancheEnergyRated(UIS) •OptimalEfficiencyandOperation -LowCost -SimpleGateDriveCircuitry -LowFigure-of-Merit( | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
6.0A,400V,1.0廓N-CHANNELPOWERMOSFET DESCRIPTION ➤IRF730is400VHighvoltageN-Channelenhancement modepowerMOS-FETchipfabricatedinadvanced siliconepitaxialplanartechnology; ➤Advancedterminationschemetoprovideenhancedvoltage-blockingcapability; ➤AvalancheEnergySpecified; ➤Source-to-DrainDiodeRecov | FS First Silicon Co., Ltd | FS | ||
iscN-ChannelMOSFETTransistor DESCRIPTION •DrainCurrent–ID=3.5A@TC=25℃ •DrainSourceVoltage- :VDSS=400V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=1.0Ω(Max) •FastSwitchingSpeed APPLICATIONS •Designedespeciallyforhighvoltage,highspeedapplications, suchasoff-lineswitchingpowersu | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
6.0A400VNCHANNELPOWERMOSFET | FCIFirst Components International 戈采戈采企业股份有限公司 | FCI | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
HEXFETPowerMOSFET | IRF International Rectifier | IRF | ||
6.5A,400VHeatsinkN-ChannelTypePowerMOSFET | THINKISEMIThinki Semiconductor Co., Ltd. 思祁半导体思祁半导体有限公司 | THINKISEMI | ||
PowerMOSFET FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinformationaboutpartsthatare RoH | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IRF |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
IR |
22+23+ |
TO-263 |
28849 |
绝对原装正品全新进口深圳现货 |
询价 | ||
IR/VISH |
21+ |
65230 |
询价 | ||||
IR |
23+ |
TO-263 |
30000 |
全新原装现货,价格优势 |
询价 | ||
IR |
23+ |
TO-263 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
VI1 |
2021+ |
SMD |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
VISHAY |
1809+ |
TO-263 |
1675 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
IR |
1923+ |
TO-263 |
6896 |
原装进口现货库存专业工厂研究所配单供货 |
询价 | ||
IR |
23+ |
TO-263 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
VB |
21+ |
D2PAK |
10000 |
原装现货假一罚十 |
询价 |
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