IRF640S中文资料PDF规格书
IRF640S规格书详情
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combinations of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The D2PAK is a surface mount power package capable of accommodating die size up to HEX-4. It provides the highest power capability and the last lowest possible on-resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. The through-hole version (IRF640L/SiHF640L) is available for low-profile applications.
FEATURES
• Surface Mount
• Low-Profile Through-Hole
• Available in Tape and Reel
• Dynamic dV/dt Rating
• 150 °C Operating Temperature
• Fast Switching
• Fully Avalanche Rated
• Lead (Pb)-free Available
产品属性
- 型号：
IRF640S
- 功能描述：
MOSFET N-Chan 200V 18 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
23+ |
TO263 |
30 |
原装现货假一赔十 |
询价 | ||
IR |
20+/21+ |
PLCC |
5600 |
全新原装进口价格优惠 |
询价 | ||
VISHAY |
21+ |
TO-263 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
VISHAY |
2023+ |
TO-263 |
700000 |
柒号芯城跟原厂的距离只有0.07公分 |
询价 | ||
IR |
1902+ |
3121 |
全新原装公司柜台现货特价热销承诺假一赔十 |
询价 | |||
IR |
2014+ |
10 |
公司原装现货常备库存! |
询价 | |||
IR |
2023+ |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 | |||
VBSEMI |
19+ |
TO-263 |
29600 |
绝对原装现货,价格优势! |
询价 | ||
IR |
22+ |
TO263 |
30000 |
只做原装正品 |
询价 | ||
IR |
23+ |
TO-263 |
62883 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
询价 |
