IRF640S中文资料威世科技数据手册PDF规格书
IRF640S规格书详情
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combinations of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The D2PAK is a surface mount power package capable of accommodating die size up to HEX-4. It provides the highest power capability and the last lowest possible on-resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. The through-hole version (IRF640L/SiHF640L) is available for low-profile applications.
FEATURES
• Surface Mount
• Low-Profile Through-Hole
• Available in Tape and Reel
• Dynamic dV/dt Rating
• 150 °C Operating Temperature
• Fast Switching
• Fully Avalanche Rated
• Lead (Pb)-free Available
产品属性
- 型号:
IRF640S
- 功能描述:
MOSFET N-Chan 200V 18 Amp
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
SILICONIXVISHAY |
22+ |
N/A |
12245 |
现货,原厂原装假一罚十! |
询价 | ||
IR |
23+ |
TO/263 |
7000 |
绝对全新原装!100%保质量特价!请放心订购! |
询价 | ||
IR |
24+ |
D2-Pak |
8866 |
询价 | |||
ST/意法 |
23+ |
TO-263 |
30000 |
全新原装现货,价格优势 |
询价 | ||
ST |
24+ |
TO-263 |
2987 |
只售原装自家现货!诚信经营!欢迎来电! |
询价 | ||
VISHAY |
25+ |
TO-263 |
6000 |
原厂原装,价格优势 |
询价 | ||
IR |
17+ |
TO-263 |
6200 |
100%原装正品现货 |
询价 | ||
IR |
2025+ |
TO-263 |
4675 |
全新原厂原装产品、公司现货销售 |
询价 | ||
IR |
06+ |
TO-263 |
15000 |
自己公司全新库存绝对有货 |
询价 | ||
IR |
2005 |
15 |
公司优势库存 热卖中!! |
询价 |