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IRF630N

PowerMOSFET(Vdss=200V,Rds(on)=0.30ohm,Id=9.3A)

Description FifthGenerationHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknow

IRF

International Rectifier

IRF630N

N-ChannelPowerMOSFETs200V,9.3A,0.30?

Features •UltraLowOn-Resistance -rDS(ON)=0.200Ω(Typ),VGS=10V •SimulationModels -TemperatureCompensatedPSPICE®andSABER©ElectricalModels -SpiceandSABER©ThermalImpedanceModels •PeakCurrentvsPulseWidthCurve •UISRatingCurve

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IRF630N

PowerMOSFET

TELTokyo Electron Ltd.

东电电子东京电子有限公司

IRF630N

iscN-ChannelMOSFETTransistor

•DESCRITION •Efficientandreliabledeviceforuseinawidevarietyofapplications •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤0.3Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableop

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRF630N

HEXFETPowerMOSFET

IRF

International Rectifier

IRF630N

FastSwitchingSpeed

DESCRIPTION ●DrainCurrent–ID=9.3A@TC=25℃ ●DrainSourceVoltage- :VDSS=200V(Min) ●StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max) ●FastSwitchingSpeed ●LowDriveRequirement APPLICATIONS ●Thisdeviceisn-channel,enhancementmode,powerMOSFETdesignedespecially

KERSEMI

Kersemi Electronic Co., Ltd.

IRF630N

N-ChannelMOSFETTransistor

DESCRIPTION ●DrainCurrent–ID=9.3A@TC=25℃ ●DrainSourceVoltage- :VDSS=200V(Min) ●StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max) ●FastSwitchingSpeed ●LowDriveRequirement APPLICATIONS ●Thisdeviceisn-channel,enhancementmode,powerMOSFETdesignedespecially

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

IRF630N

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRF630NL

PowerMOSFET(Vdss=200V,Rds(on)=0.30ohm,Id=9.3A)

Description FifthGenerationHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknow

IRF

International Rectifier

IRF630NL

N-ChannelPowerMOSFETs200V,9.3A,0.30?

Features •UltraLowOn-Resistance -rDS(ON)=0.200Ω(Typ),VGS=10V •SimulationModels -TemperatureCompensatedPSPICE®andSABER©ElectricalModels -SpiceandSABER©ThermalImpedanceModels •PeakCurrentvsPulseWidthCurve •UISRatingCurve

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

详细参数

  • 型号:

    IRF630BTSTU

  • 功能描述:

    MOSFET 200V N-CHAN Short Leads

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
onsemi(安森美)
24+
-
7793
支持大陆交货,美金交易。原装现货库存。
询价
FSC/ON
23+
原包装原封 □□
68000
原装进口特价供应 特价,原装元器件供应,支持开发样品 更多详细咨询 库存
询价
FAIRCHILD/仙童
23+
68000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
Fairchild/ON
22+
TO2203 Cropped Leads
9000
原厂渠道,现货配单
询价
Fairchild/ON
23+
TO2203 Cropped Leads
9000
原装正品,支持实单
询价
ON Semiconductor
2022+
TO-220-3
38550
全新原装 支持表配单 中国著名电子元器件独立分销
询价
IR
23+
TO220
50000
全新原装正品现货,支持订货
询价
IR
23+
TO220
50000
全新原装正品现货,支持订货
询价
IR
24+
TO220
60000
全新原装现货
询价
FAI
24+
TO-220
58000
询价
更多IRF630BTSTU供应商 更新时间2025-7-20 16:12:00