首页 >IRF6100MOS>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
HEXFETPowerMOSFET Description Truechip-scalepackagingisavailablefromInternationalRectifier.Throughtheuseofadvancedprocessingtechniques,andauniquepackagingconcept,extremelylowon-resistanceandthehighestpowerdensitiesintheindustryhavebeenmadeavailableforbatteryandloadmanagemen | IRF International Rectifier | IRF | ||
PureTouchCapacitanceTouchICFamilywithIntegratedLEDDrivers | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | etc2 | ||
36VLowCostHighSideCurrentSenseinaSOT-23 | LINERLinear Technology 凌力尔特凌特半导体 | LINER | ||
Precision,GainSelectableHighSideCurrentSenseAmplifier | LINERLinear Technology 凌力尔特凌特半导体 | LINER | ||
HighVoltage,BidirectionalCurrentSenseAmplifierLowPowerShutdown | LINERLinear Technology 凌力尔特凌特半导体 | LINER | ||
Precision,GainSelectableHighSideCurrentSenseAmplifier | LINERLinear Technology 凌力尔特凌特半导体 | LINER | ||
HighVoltage,High-SideCurrentSense | LINERLinear Technology 凌力尔特凌特半导体 | LINER | ||
36VLowCostHighSideCurrentSenseinaSOT-23 FEATURES GainConfigurablewithTwoResistors LowOffsetVoltage:250μVMaximum OutputCurrent:1mAMaximum SupplyRange:2.7Vto36V,44VAbsoluteMaximum LowInputBiasCurrent:40nAMaximum PSRR:106dBMinimum LowSupplyCurrent:65μATypical,V+=12V OperatingTemperatureRange:–40°C | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | AD | ||
HighTemperatureHighSideCurrentSenseAmpinSOT-23 FEATURES FullyTestedat–55°C(MP),–40°C(H), 25°C and 150°C GainConfigurablewithTwoResistors LowOffsetVoltage:250μVMaximum OutputCurrent:1mAMaximum SupplyRange:2.7Vto36V,44VAbsoluteMaximum LowInputBiasCurrent:40nAMaximum PSRR:106dBMinimum LowSupplyCurrent:65 | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | AD | ||
Precision,GainSelectableHighSideCurrentSenseAmplifier | LINERLinear Technology 凌力尔特凌特半导体 | LINER |
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