首页 >IRF5505N>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
-60VP-ChannelEnhancementModeMOSFET Description Theusesadvancedtrenchtechnology toprovideexcellentRDS(ON),lowgatechargeand operationwithgatevoltagesaslowas4.5V.This deviceissuitableforuseasa BatteryprotectionorinotherSwitchingapplication. GeneralFeatures VDS=-60VID=-10A RDS(ON) | EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊欧翊欧半导体 | EVVOSEMI | ||
UltraLowOn-Resistance | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFET(Vdss=-55V,Rds(on)=0.11ohm,Id=-18A) | IRF International Rectifier | IRF | ||
UltraLowOn-Resistance VDSS=-55V RDS(on)=0.11Ω ID=-18A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignth | IRF International Rectifier | IRF | ||
ultralowon-resistance | IRF International Rectifier | IRF | ||
UltraLowOn-Resistance Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRF International Rectifier | IRF | ||
ULTRALOWONRESISTANCE | IRF International Rectifier | IRF | ||
ULTRALOWON-RESISTANCE | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
-60VP-ChannelEnhancementModeMOSFET Description Theusesadvancedtrenchtechnology toprovideexcellentRDS(ON),lowgatechargeand operationwithgatevoltagesaslowas4.5V.This deviceissuitableforuseasa BatteryprotectionorinotherSwitchingapplication. GeneralFeatures VDS=-60VID=-10A RDS(ON) | EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊欧翊欧半导体 | EVVOSEMI | ||
-60VP-ChannelEnhancementModeMOSFET GeneralFeatures VDS=-60VID=-10A RDS(ON) | UMWGuangdong Youtai Semiconductor Co., Ltd. 友台半导体广东友台半导体有限公司 | UMW |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|
