首页 >IRF520STRLPBF>规格书列表
零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
PowerMOSFET(Vdss=100V,Rds(on)=0.165ohm,Id=9.6A) Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr | IRF International Rectifier | IRF | ||
PowerMOSFET(Vdss=100V,Rds(on)=0.165ohm,Id=9.6A) Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p | IRF International Rectifier | IRF | ||
HEXFETPowerMOSFET | IRF International Rectifier | IRF | ||
HEXFET짰PowerMOSFET Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr | IRF International Rectifier | IRF | ||
PowerMOSFET(Vdss=100V,Rds(on)=0.165ohm,Id=9.6A) Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p | IRF International Rectifier | IRF | ||
HEXFETPowerMOSFET | IRF International Rectifier | IRF | ||
AdvancedPowerMOSFET FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■175°COperatingTemperature ■LowerLeakageCurrent:10μA(Max.)@VDS=100V ■LowerRDS(ON):0.155Ω(Typ.) | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialapplicat | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
HEXFETPOWERMOSFET Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220Fullpakeliminatestheneedforadditionalinsulatinghardwareincommercial-industri | IRF International Rectifier | IRF | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
HEXFETPowerMOSFET Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220Fullpakeliminatestheneedforadditionalinsulatinghardwareincommercial-industri | IRF International Rectifier | IRF | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialapplicat | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PowerMOSFET(Vdss=100V,Rds(on)=0.20ohm,Id=7.6A) Through-HolePackags TO-220FullPak(FullyIsolated) | IRF International Rectifier | IRF | ||
HEXFET짰PowerMOSFET | IRF International Rectifier | IRF | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
AdvancedPowerMOSFET FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■175°COperatingTemperature ■LowerLeakageCurrent:10μA(Max.)@VDS=100V ■LowerRDS(ON):0.155Ω(Typ.) | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
AdvancedPowerMOSFET FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■175°COperatingTemperature ■LowerLeakageCurrent:10μA(Max.)@VDS=100V ■LowerRDS(ON):0.155Ω(Typ.) | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
NA |
19+ |
74557 |
原厂代理渠道,每一颗芯片都可追溯原厂; |
询价 | |||
IR |
23+ |
TO-263 |
98500 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
IR |
22+ |
TO-263 |
6000 |
终端可免费供样,支持BOM配单 |
询价 | ||
IR |
23+ |
TO-263 |
8000 |
只做原装现货 |
询价 | ||
IR |
23+ |
TO-263 |
7000 |
询价 | |||
IR |
12+ |
TO-263 |
15000 |
全新原装,绝对正品,公司现货供应。 |
询价 | ||
IR |
21+ |
TO-263 |
30000 |
只做正品原装现货 |
询价 | ||
VISHAY |
1503+ |
TO-263 |
3000 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
I |
23+ |
D2PAK |
10000 |
公司只做原装正品 |
询价 | ||
VB |
21+ |
D2PAK |
10000 |
原装现货假一罚十 |
询价 |
相关规格书
更多- IRF5210
- IRF530
- IRF5305S
- IRF530N
- IRF530S
- IRF540N
- IRF540NS
- IRF5800TR
- IRF610
- IRF620
- IRF6217
- IRF630
- IRF630B
- IRF630N
- IRF630S
- IRF634A
- IRF640
- IRF640B
- IRF640NPBF
- IRF640NSTRL
- IRF644
- IRF6604
- IRF7101
- IRF7102
- IRF7103Q
- IRF7104
- IRF7105
- IRF7106
- IRF720
- IRF7201TR
- IRF7203
- IRF7204TR
- IRF7205TR
- IRF7210
- IRF7233
- IRF7240
- IRF7301
- IRF7303
- IRF7304
- IRF7306
- IRF7307
- IRF7309
- IRF730A
- IRF730S
- IRF7311TR
相关库存
更多- IRF5210S
- IRF5305
- IRF530A
- IRF530NS
- IRF540
- IRF540NPBF
- IRF540S
- IRF5803D2
- IRF614
- IRF6215
- IRF624
- IRF630A
- IRF630M
- IRF630NS
- IRF634
- IRF634B
- IRF640A
- IRF640N
- IRF640NS
- IRF640S
- IRF644S
- IRF710
- IRF7101TR
- IRF7103
- IRF7103TR
- IRF7104TR
- IRF7105TR
- IRF7108
- IRF7201
- IRF7202
- IRF7204
- IRF7205
- IRF7207
- IRF7220
- IRF7233TR
- IRF730
- IRF7301TR
- IRF7303TR
- IRF7304TR
- IRF7306TR
- IRF7307TR
- IRF7309TR
- IRF730B
- IRF7311
- IRF7313