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IRF520V

PowerMOSFET(Vdss=100V,Rds(on)=0.165ohm,Id=9.6A)

Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr

IRF

International Rectifier

IRF520VL

PowerMOSFET(Vdss=100V,Rds(on)=0.165ohm,Id=9.6A)

Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRF520VLPBF

HEXFETPowerMOSFET

IRF

International Rectifier

IRF520VPBF

HEXFET짰PowerMOSFET

Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr

IRF

International Rectifier

IRF520VS

PowerMOSFET(Vdss=100V,Rds(on)=0.165ohm,Id=9.6A)

Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRF520VSPBF

HEXFETPowerMOSFET

IRF

International Rectifier

IRFI520A

AdvancedPowerMOSFET

FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■175°COperatingTemperature ■LowerLeakageCurrent:10μA(Max.)@VDS=100V ■LowerRDS(ON):0.155Ω(Typ.)

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IRFI520A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRFI520G

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialapplicat

VishayVishay Siliconix

威世科技威世科技半导体

IRFI520G

HEXFETPOWERMOSFET

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220Fullpakeliminatestheneedforadditionalinsulatinghardwareincommercial-industri

IRF

International Rectifier

IRFI520G

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半导体

IRFI520GPBF

HEXFETPowerMOSFET

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220Fullpakeliminatestheneedforadditionalinsulatinghardwareincommercial-industri

IRF

International Rectifier

IRFI520GPBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialapplicat

VishayVishay Siliconix

威世科技威世科技半导体

IRFI520GPBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半导体

IRFI520N

PowerMOSFET(Vdss=100V,Rds(on)=0.20ohm,Id=7.6A)

Through-HolePackags TO-220FullPak(FullyIsolated)

IRF

International Rectifier

IRFI520NPBF

HEXFET짰PowerMOSFET

IRF

International Rectifier

IRFS520

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRFS520A

AdvancedPowerMOSFET

FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■175°COperatingTemperature ■LowerLeakageCurrent:10μA(Max.)@VDS=100V ■LowerRDS(ON):0.155Ω(Typ.)

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IRFS520A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRFW520A

AdvancedPowerMOSFET

FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■175°COperatingTemperature ■LowerLeakageCurrent:10μA(Max.)@VDS=100V ■LowerRDS(ON):0.155Ω(Typ.)

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

供应商型号品牌批号封装库存备注价格
NA
19+
74557
原厂代理渠道,每一颗芯片都可追溯原厂;
询价
IR
23+
TO-263
98500
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
IR
22+
TO-263
6000
终端可免费供样,支持BOM配单
询价
IR
23+
TO-263
8000
只做原装现货
询价
IR
23+
TO-263
7000
询价
IR
12+
TO-263
15000
全新原装,绝对正品,公司现货供应。
询价
IR
21+
TO-263
30000
只做正品原装现货
询价
VISHAY
1503+
TO-263
3000
就找我吧!--邀您体验愉快问购元件!
询价
I
23+
D2PAK
10000
公司只做原装正品
询价
VB
21+
D2PAK
10000
原装现货假一罚十
询价
更多IRF520STRLPBF供应商 更新时间2024-9-26 16:12:00