N-CHANNEL POWER MOSFETS

FEATURES • Low Boston) at high voltage • Improved Inductive ruggedness • Excellent high voltage stability • Fast switching times • Rugged polyslllcon gate cell structure • Low Input capacitance • Extended safe operating area • Improved high temperature reliability • TO-3 package (High vol

文件：137.56 Kbytes 页数：3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

N-Channel Power MOSFETs

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high voltage, high speed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers. ● VGS Rated at ±20V ● Silicon Gate for Fast Switching Spe

文件：271.96 Kbytes 页数：5 Pages

ARTSCHIP

N-Channel Power MOSFETs, 8A, 450 V/500V

Description These devices are n-channel, enhancement mode, power MOSFETs designed sepecially for high voltage, high speed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers.

文件：150.37 Kbytes 页数：5 Pages

Fairchild

仙童半导体

N-CHANNEL POWER MOSFETS

FEATURES • Low Boston) at high voltage • Improved Inductive ruggedness • Excellent high voltage stability • Fast switching times • Rugged polyslllcon gate cell structure • Low Input capacitance • Extended safe operating area • Improved high temperature reliability • TO-3 package (High vol

文件：211.25 Kbytes 页数：5 Pages

Samsung

三星

isc N-Channel MOSFET Transistor

文件：49.07 Kbytes 页数：2 Pages

ISC

无锡固电

Trans MOSFET N-CH 500V 7A 3-Pin(2+Tab) TO-3

NJS

Trans MOSFET N-CH 500V 7A 3-Pin(2+Tab) TO-3

NJS