首页>IRF2807ZSPBF>规格书详情
IRF2807ZSPBF中文资料PDF规格书
IRF2807ZSPBF规格书详情
Description
This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
Features
● Advanced Process Technology
● Ultra Low On-Resistance
● Dynamic dv/dt Rating
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
● Lead-Free
产品属性
- 型号：
IRF2807ZSPBF
- 功能描述：
MOSFET 75V 1 N-CH HEXFET 9.4mOhms 71nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
22+23+ |
TO-263 |
28293 |
绝对原装正品全新进口深圳现货 |
询价 | ||
Infineon Technologies |
21+ |
TO2633 D2Pak (2 Leads + Tab) T |
13880 |
公司只售原装,支持实单 |
询价 | ||
IR |
11+ |
TO-263 |
43 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
IR |
22+ |
TO-263 |
5623 |
只做原装正品现货!或订货假一赔十! |
询价 | ||
IR |
22+/23+ |
TO-263 |
9800 |
原装进口公司现货假一赔百 |
询价 | ||
IR |
23+ |
TO-263 |
30000 |
全新原装现货,价格优势 |
询价 | ||
IR |
11+ |
TO-263 |
2411 |
询价 | |||
IR |
2024+实力库存 |
TO-263 |
2411 |
只做原厂渠道 可追溯货源 |
询价 | ||
IR |
2022 |
TO-263 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
询价 | ||
IR |
TO-263 |
6000 |
原装现货,长期供应,终端可账期 |
询价 |
