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IXFC13N50

HiPerFETMOSFETISOPLUS220

IXYS

IXYS Corporation

IXFC13N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=12A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=17mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXFH13N50

HiPerFETPowerMOSFETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

IXFH13N50

HIPERFETPowerMOSFTETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

IXFJ13N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=13A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXFJ13N50

HiPerFETPowerMOSFETs

HiPerFETPowerMOSFETs N-ChannelEnhancementMode Highdv/dt,Lowtrr,HDMOSTMFamily Features •Lowprofile,highpowerpackage •Longcreepandstrikedistances •Easyup-gradepathforTO-220designs •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedIn

IXYS

IXYS Corporation

IXFM13N50

HiPerFETPowerMOSFETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

IXFM13N50

HIPERFETPowerMOSFTETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

IXFM13N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=13A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Switchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXTC13N50

PowerMOSFETISOPLUS220

PowerMOSFETISOPLUS220TM ElectricallyIsolatedBackSurface N-ChannelEnhancementMode Highdv/dt,Lowtrr,HDMOSTMFamily Features •SiliconchiponDirect-Copper-Bond substrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation

IXYS

IXYS Corporation

供应商型号品牌批号封装库存备注价格
IR
24+
TO-3
10000
询价
MOT
05+
原厂原装
4236
只做全新原装真实现货供应
询价
IR
23+
TO-3
1500
全新原装现货
询价
IR/MOT
24+
TO-3
1000
原装现货假一罚十
询价
IR
2020+
TO-3
30
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
IR
2015+
TO-3(铁帽)
19889
一级代理原装现货,特价热卖!
询价
FAIRCHILD
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
Magnatec
24+
NA
3000
进口原装正品优势供应
询价
UNMARKED
11
全新原装 货期两周
询价
IR
23+
NA
113
专做原装正品,假一罚百!
询价
更多IRF13N50供应商 更新时间2025-7-20 16:30:00