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IR333-A

5mmInfraredLED,T-13/4

EverlightEverlight Electronics Co., Ltd

台湾亿光亿光电子工业股份有限公司

IR333C

5mmInfraredLED,T-13/4

Descriptions •EVERLIGHT’sInfraredEmittingDiode(IR333C)isahighintensitydiode,moldedinawaterclearplasticpackage. •Thedeviceisspectrallymatchedwithphototransistor,photodiodeandinfraredreceivermodule. Features •Highreliability •Highradiantintensity •Peakwave

EverlightEverlight Electronics Co., Ltd

台湾亿光亿光电子工业股份有限公司

IR333C-A

5mmInfraredLED

Description: InfraredEmittingDiode(IR333C-A)isahighintensitydiode,moldedinawaterclearplasticpackage. Thedeviceisspectrallymatchedwithphototransistor,photodiodeandinfraredreceivermodule. Features: Highradiantintensity Peakwavelengthp=940nm 

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

IR333C-A

5mmInfraredLED,T-13/4

Features ․Highreliability ․Highradiantintensity ․Peakwavelengthλp=940nm ․2.54mmLeadspacing ․Lowforwardvoltage ․Pbfree ․ThisproductitselfwillremainwithinRoHScompliantversion.

EverlightEverlight Electronics Co., Ltd

台湾亿光亿光电子工业股份有限公司

IRF333

N-ChannelPowerMOSFETs,5.5A,350V/400V

Description Thesedevicesaren-channol,enhancementmode,powerMOSFETsdesignedespeciallyforhighvoltage,highspeedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. •VQSRatedat±20V •SiliconGateforFastSwitchingSp

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IRF333

N-CHANNELPOWERMOSFETS

FEATURES ●LowRDS(on) ●Improvedinductiveruggedness ●Fastswitchingtimes ●Ruggedpolysilicongatecellstructure ●LowInputcapacitance ●Extendedsafeoperatingarea ●Improvedhightemperaturereliability ●TO-3package(Standard)

SamsungSamsung semiconductor

三星三星半导体

IRF333

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRF333

IRF330-333/IRF730-733MTM/MTP5N35/5N40N-ChannelPowerMOSFETs

Description Thesedevicesaren-channol,enhancementmode,powerMOSFETsdesignedespeciallyforhighvoltage,highspeedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. •VQSRatedat±20V •SiliconGateforFastSwitchingSp

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

IRF333

IRF330-333/IRF730-733MTM/MTP5N35/5N40N-ChannelPowerMOSFETs

Description Thesedevicesaren-channol,enhancementmode,powerMOSFETsdesignedespeciallyforhighvoltage,highspeedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. •VQSRatedat±20V •SiliconGateforFastSwitchingSp

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

IRF333

N-ChannelPowerMOSFETs,5.5A,350V/400V

Description Thesedevicesaren-channol,enhancementmode,powerMOSFETsdesignedespeciallyforhighvoltage,highspeedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. •VQSRatedat±20V •SiliconGateforFastSwitchingSp

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

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