丝印：65R018C8；Package：PG-TO247-4；MOSFET 650V CoolMOS™ CM8 Power Transistor

• Best in class 650V SJ MOSFET performance • Suitable for hard and soft switching topologies thanks to an outstanding commutation ruggedness • Integrated fast body diode and ESD protection • .XT interconnection technology for best in class thermal performance

文件：999.52 Kbytes 页数：15 Pages

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500V-950V CoolMOS™ N-Channel Power MOSFET

650 V CoolMOS™ 8 power transistor • Best-in-class RDS(on)*A\n• Integrated fast body diode\n• .XT interconnection\n• ESD protection\n• Minimized cost of maintenance\n\n优势:\n• Increased power density\n• Ease of use and fast design-in\n• Simplified portfolio\n• Reduced assembly cost;

Infineon

英飞凌

MOSFET 650V CoolMOS™ CM8 Power Transistor

Features • Best in class 650V SJ MOSFET performance • Suitable for hard and soft switching topologies thanks to an outstanding commutation ruggedness • Integrated fast body diode and ESD protection • .XT interconnection technology for best in class thermal performance Benefits • Ease of u

文件：1.20276 Mbytes 页数：16 Pages

Infineon

英飞凌

MOSFET 650V CoolMOS™ CM8 Power Transistor

Features • Best in class 650V SJ MOSFET performance • Suitable for hard and soft switching topologies thanks to an outstanding commutation ruggedness • Integrated fast body diode and ESD protection • .XT interconnection technology for best in class thermal performance Benefits • Ease of u

文件：1.33865 Mbytes 页数：16 Pages

Infineon

英飞凌

MOSFET 650V CoolMOS™ CM8 Power Transistor

Features • Best in class 650V SJ MOSFET performance • Suitable for hard and soft switching topologies thanks to an outstanding commutation ruggedness • Integrated fast body diode and ESD protection • .XT interconnection technology for best in class thermal performance Benefits • Ease of u

文件：1.12213 Mbytes 页数：15 Pages

Infineon

英飞凌