首页 >IPS105N03L G>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
N-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | ||
OptiMOS3Power-Transistor ComingSoon. Ifyouhavesomeinformationonrelatedparts,pleaseshareusefulinformationbyaddinglinksbelow. | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 |  | ||
OptiMOS3Power-Transistor ComingSoon. Ifyouhavesomeinformationonrelatedparts,pleaseshareusefulinformationbyaddinglinksbelow. | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | ||
OptiMOS3Power-Transistor ComingSoon. Ifyouhavesomeinformationonrelatedparts,pleaseshareusefulinformationbyaddinglinksbelow. | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | ||
OptiMOS3Power-Transistor ComingSoon. Ifyouhavesomeinformationonrelatedparts,pleaseshareusefulinformationbyaddinglinksbelow. | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | ||
Switching(30V,/-0.5A) | ROHMRohm Semiconductor 罗姆罗姆半导体集团 |  | ||
N-ChannelEnhancementModeFieldEffectTransistor | YANGJIEYangzhou yangjie electronic co., ltd 扬州扬杰电子扬州扬杰电子科技股份有限公司 |  |
详细参数
- 型号：
IPS105N03L G
- 功能描述：
MOSFET N-CH 30V 35A 10.5mOhms
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON |
08+(pbfree) |
IPAKSL(TO-251SL) |
8866 |
询价 | |||
Infineon |
23+ |
TO-251-3 |
7750 |
全新原装优势 |
询价 | ||
INFINE0N |
23+ |
TO-251 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
询价 | ||
23+ |
N/A |
38160 |
正品授权货源可靠 |
询价 | |||
IR |
23+ |
PG-TO251-3-11 |
12300 |
全新原装真实库存含13点增值税票! |
询价 | ||
INFINEON |
2020+ |
TO-251 |
49420 |
公司代理品牌,原装现货超低价清仓! |
询价 | ||
INFINE0N |
20+ |
TO-251 |
90000 |
全新原装正品/库存充足 |
询价 | ||
INFINEON/英飞凌 |
TO-251 |
198589 |
假一罚十原包原标签常备现货! |
询价 | |||
INFINEON |
22+ |
TO-251 |
32350 |
原装正品 假一罚十 公司现货 |
询价 | ||
I |
23+ |
TO-251 |
10000 |
公司只做原装正品 |
询价 |
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