IPP60R190C6规格书应用电路供应商报价-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
IPP60R190C6	文件：338.29 Kbytes Page：2 Pages	N-Channel MOSFET Transistor •DESCRIPTION •ProvideallbenefitsofafastswitchingsuperjunctionMOSwhilenot sacrificingeaseofuse •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.19Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustde	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IPP60R190C6	文件：2.20584 Mbytes Page：19 Pages	Metal Oxide Semiconductor Field Effect Transistor Description CoolMOSisarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOSC6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theoffereddevi	InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司	Infineon
IPP60R190C6	文件：1.22055 Mbytes Page：19 Pages	600V CoolMOS C6 Power Transistor Description CoolMOSisarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOSC6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theoffereddevi	InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司	Infineon
IPP60R190C6	文件：1.27182 Mbytes Page：19 Pages	Metal Oxide Semiconductor Field Effect Transistor	InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司	Infineon
60R190C6	文件：1.22055 Mbytes Page：19 Pages	600VCoolMOSC6PowerTransistor Description CoolMOSisarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOSC6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theoffereddevi	InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司	Infineon
IIPP60R190C6	文件：338.29 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor •DESCRIPTION •ProvideallbenefitsofafastswitchingsuperjunctionMOSwhilenot sacrificingeaseofuse •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.19Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustde	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IIPW60R190C6	文件：335.46 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor •DESCRITION •Fastswitching •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤190mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IPA60R190C6	文件：1.22055 Mbytes Page：19 Pages	600VCoolMOSC6PowerTransistor Description CoolMOSisarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOSC6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theoffereddevi	InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司	Infineon
IPA60R190C6	文件：2.20584 Mbytes Page：19 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOSisarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOSC6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theoffereddevi	InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司	Infineon
IPA60R190C6	文件：316.51 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor •FEATURES •WithTO-220Fpackaging •Highspeedswitching •Veryhighcommutationruggedness •Easytouse •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperationz •APPLICATIONS •PFCstages,hardswitchingPWMstagesandresonants	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IPA60R190C6	文件：1.27182 Mbytes Page：19 Pages	MetalOxideSemiconductorFieldEffectTransistor	InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司	Infineon
IPB60R190C6	文件：1.27182 Mbytes Page：19 Pages	MetalOxideSemiconductorFieldEffectTransistor	InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司	Infineon
IPB60R190C6	文件：2.20584 Mbytes Page：19 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOSisarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOSC6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theoffereddevi	InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司	Infineon
IPB60R190C6	文件：1.22055 Mbytes Page：19 Pages	600VCoolMOSC6PowerTransistor Description CoolMOSisarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOSC6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theoffereddevi	InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司	Infineon
IPB60R190C6	文件：318.31 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor •FEATURES •WithTO-263(D2PAK)packaging •Ultra-fastbodydiode •Highspeedswitching •Veryhighcommutationruggedness •Easytouse •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperationz •APPLICATIONS •PFCstages,hardswit	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IPI60R190C6	文件：303.08 Kbytes Page：3 Pages	IscN-ChannelMOSFETTransistor •FEATURES •WithTo-262(I2PAK)package •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IPI60R190C6	文件：1.22055 Mbytes Page：19 Pages	600VCoolMOSC6PowerTransistor Description CoolMOSisarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOSC6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theoffereddevi	InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司	Infineon
IPI60R190C6	文件：1.27182 Mbytes Page：19 Pages	MetalOxideSemiconductorFieldEffectTransistor	InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司	Infineon
IPI60R190C6	文件：2.20584 Mbytes Page：19 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOSisarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOSC6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theoffereddevi	InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司	Infineon
IPW60R190C6	文件：1.22055 Mbytes Page：19 Pages	600VCoolMOSC6PowerTransistor Description CoolMOSisarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOSC6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theoffereddevi	InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司	Infineon

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详细参数

型号：
IPP60R190C6
功能描述：
MOSFET 600V CoolMOS C6 Power Transistor
RoHS：
否
制造商：
STMicroelectronics
晶体管极性：
N-Channel
汲极/源极击穿电压：
650 V
闸/源击穿电压：
25 V
漏极连续电流：
130 A 电阻汲极/源极
RDS（导通）：
0.014 Ohms
配置：
Single
安装风格：
Through Hole
封装/箱体：
Max247
封装：
Tube

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市坤融电子科技有限公司	IPP60R190C6	INFINEON/英飞凌	24+	TO220	8950	BOM配单专家,发货快,价格低	询价
深圳市鼎欣微电子有限公司	IPP60R190C6	INFINEON/英飞凌	22+	TO220	21000	原厂原包装。假一罚十。可开13%增值税发票。	询价
深圳深宇韬电子科技有限公司	IPP60R190C6	INFINEON	22+	sot	6600	正品渠道现货,终端可提供BOM表配单。	询价
深圳市昌和盛利电子有限公司	IPP60R190C6		23+	TO-220	12550	专注原装正品现货特价中量大可定	询价
深圳市赛尔通科技有限公司	IPP60R190C6	INFINEON	23+	TO-220	65400		询价
深圳市英科美电子有限公司	IPP60R190C6	INFINEON/英飞凌	2021+	TO-220	18505	原装进口假一罚十	询价
深圳市宝隆宏业科技有限公司	IPP60R190C6	INFINOEN	21+	TO-220	36800	进口原装现货假一赔十	询价
深圳市华斯顿科技有限公司	IPP60R190C6	infineon	22+23+	TO220	13397	绝对原装正品全新进口深圳现货	询价
深圳市航润创能电子集团有限公司	IPP60R190C6	INFINEON/英飞凌	19+	TO-220	450	进口原装假一赔十支持含税	询价
深圳市讯顺达科技有限公司	IPP60R190C6	INFINEON	21+	TO-220	10000	全新原装公司现货	询价

更多IPP60R190C6供应商更新时间2024-9-20 16:37:00

详细参数

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