丝印：04CN10N；Package：PG-TO262-3；OptiMOS?? Power-Transistor

Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchr

文件：501.72 Kbytes 页数：11 Pages

Infineon

英飞凌

isc N-Channel MOSFET Transistor

文件：338.19 Kbytes 页数：2 Pages

ISC

无锡固电

OptiMOS?? Power-Transistor

Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchr

文件：501.72 Kbytes 页数：11 Pages

Infineon

英飞凌

OptiMOS?? Power-Transistor

Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchr

文件：501.72 Kbytes 页数：11 Pages

Infineon

英飞凌