isc N-Channel MOSFET Transistor

·FEATURES ·Drain Current –ID= 90A@ TC=25℃ ·Drain Source Voltage- : VDSS= 40V(Min) ·Static Drain-Source On-Resistance : RDS(on) : 5.2mΩ(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Ultra Low On-resistance ·F

文件：335.76 Kbytes 页数：2 Pages

ISC

无锡固电

OptiMOS-T Power-Transistor

文件：190.29 Kbytes 页数：9 Pages

Infineon

英飞凌

40 V、N沟道、5.2 mΩ（最大值）、汽车MOSFET、DPAK、OptiMOS ™ -T

• N-channel - Enhancement mode\n• Automotive AEC Q101 qualified\n• MSL1 up to 260°C peak reflow\n• 175°C operating temperature\n• Green Package (RoHS compliant)\n• 100% Avalanche tested\n\n优势:\n• Low switching and conduction power losses for highest thermal efficiency\n• Robust packages with sup;

Infineon

英飞凌

OptiMOS-T Power-Transistor

文件：193.72 Kbytes 页数：9 Pages

Infineon

英飞凌

OptiMOS-T Power-Transistor

文件：193.72 Kbytes 页数：9 Pages

Infineon

英飞凌