首页 >IPD80N04S3-06>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
IPD80N04S3-06 | isc N-Channel MOSFET Transistor ·FEATURES ·DrainCurrent–ID=90A@TC=25℃ ·DrainSourceVoltage- :VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on):5.2mΩ(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ·DESCRITION ·UltraLowOn-resistance ·F | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | |
IPD80N04S3-06 | OptiMOS-T Power-Transistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | |
OptiMOS-TPower-Transistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
OptiMOS-TPower-Transistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
OptiMOS-TPower-Transistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon |
详细参数
- 型号：
IPD80N04S3-06
- 功能描述：
MOSFET OPTIMOS -T PWR-TRANS 40V 90A 5.2mOhms
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
20+ |
TO-252 |
5830 |
终端可免费提供样品,欢迎咨询 |
询价 | ||
INFINEON/英飞凌 |
2021+ |
SOT-252 |
17231 |
原装进口假一罚十 |
询价 | ||
INFINEON |
21+ |
TO-252 |
15000 |
询价 | |||
IR |
23+ |
TO-252 |
12300 |
全新原装真实库存含13点增值税票! |
询价 | ||
INF |
21+ |
TO252-3 |
5000 |
原装现货/假一赔十/支持第三方检验 |
询价 | ||
INENOI |
20+ |
SOT252 |
12300 |
全新原装,价格优势 |
询价 | ||
INFINEON/英飞凌 |
22+ |
TO-252 |
13975 |
只做原装进口 免费送样!! |
询价 | ||
INFINEON |
21+ |
TO-252 |
60000 |
原装正品进口现货 |
询价 | ||
Infineon(英飞凌) |
22+ |
N/A |
12000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
Infineon(英飞凌) |
23+ |
NA |
7000 |
原装正品!假一罚十! |
询价 |
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