IPD65R420CFDXT规格书行情报价英飞凌-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
65R420	文件：461.65 Kbytes Page：6 Pages	11A竊?50VN-CHANNELMOSFET	KIAGuangdong Keyia Semiconductor Technology Co., Ltd 可易亚半导体广东可易亚半导体科技有限公司	KIA
IIPP65R420CFD	文件：339.05 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor •DESCRIPTION •ProvideallbenefitsofafastswitchingSJMOSFETwhileoffering anextremelyfastandrobustbodydiode •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.42Ω·Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariation	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IIPW65R420CFD	文件：335.46 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor •DESCRITION •FastSwitching •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤420mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IPA65R420CFD	文件：7.64783 Mbytes Page：21 Pages	650VCoolMOSC6CFDPowerTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •Ultra-fastbodydiode •Veryhighcommutationruggedness •ExtremelylowlossesduetoverylowFOMRdso	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
IPA65R420CFD	文件：4.60565 Mbytes Page：21 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •Ultra-fastbodydiode •Veryhighcommutationruggedness •ExtremelylowlossesduetoverylowFOMRdso	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
IPA65R420CFD	文件：270.11 Kbytes Page：2 Pages	IscN-ChannelMOSFETTransistor •FEATURES •WithTO-220FPackage •DrainSourceVoltage- :VDSS=650V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.42Ω(Max) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplicati	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IPB65R420CFD	文件：4.60565 Mbytes Page：21 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •Ultra-fastbodydiode •Veryhighcommutationruggedness •ExtremelylowlossesduetoverylowFOMRdso	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
IPB65R420CFD	文件：189.44 Kbytes Page：2 Pages	IscN-ChannelMOSFETTransistor •FEATURES •WithTo-263(D2PAK)package •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IPB65R420CFD	文件：7.64783 Mbytes Page：21 Pages	650VCoolMOSC6CFDPowerTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •Ultra-fastbodydiode •Veryhighcommutationruggedness •ExtremelylowlossesduetoverylowFOMRdso	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
IPD65R420CFD	文件：4.60565 Mbytes Page：21 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •Ultra-fastbodydiode •Veryhighcommutationruggedness •ExtremelylowlossesduetoverylowFOMRdso	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
IPD65R420CFD	文件：7.64783 Mbytes Page：21 Pages	650VCoolMOSC6CFDPowerTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •Ultra-fastbodydiode •Veryhighcommutationruggedness •ExtremelylowlossesduetoverylowFOMRdso	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
IPD65R420CFDA	文件：1.31097 Mbytes Page：14 Pages	MetalOxideSemiconductorFieldEffectTransistor	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
IPI65R420CFD	文件：7.64783 Mbytes Page：21 Pages	650VCoolMOSC6CFDPowerTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •Ultra-fastbodydiode •Veryhighcommutationruggedness •ExtremelylowlossesduetoverylowFOMRdso	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
IPI65R420CFD	文件：4.60565 Mbytes Page：21 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •Ultra-fastbodydiode •Veryhighcommutationruggedness •ExtremelylowlossesduetoverylowFOMRdso	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
IPI65R420CFD	文件：331.5 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor •DESCRIPTION •ProvideallbenefitsofafastswitchingSJMOSFETwhileoffering anextremelyfastandrobustbodydiode •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.42Ω·Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariation	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IPP65R420CFD	文件：339.05 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor •DESCRIPTION •ProvideallbenefitsofafastswitchingSJMOSFETwhileoffering anextremelyfastandrobustbodydiode •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.42Ω·Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariation	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IPP65R420CFD	文件：7.64783 Mbytes Page：21 Pages	650VCoolMOSC6CFDPowerTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •Ultra-fastbodydiode •Veryhighcommutationruggedness •ExtremelylowlossesduetoverylowFOMRdso	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
IPP65R420CFD	文件：4.60565 Mbytes Page：21 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •Ultra-fastbodydiode •Veryhighcommutationruggedness •ExtremelylowlossesduetoverylowFOMRdso	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
IPW65R420CFD	文件：7.64783 Mbytes Page：21 Pages	650VCoolMOSC6CFDPowerTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •Ultra-fastbodydiode •Veryhighcommutationruggedness •ExtremelylowlossesduetoverylowFOMRdso	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
IPW65R420CFD	文件：4.60565 Mbytes Page：21 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •Ultra-fastbodydiode •Veryhighcommutationruggedness •ExtremelylowlossesduetoverylowFOMRdso	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon

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详细参数

型号：
IPD65R420CFDXT
制造商：
Infineon Technologies AG
功能描述：
MOSFET N-CH 650V 8.7A TO252

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市莱克讯科技有限公司	IPD65R600C6	INFINEON	2017+	原厂封装	25896	深圳代理原装现货进口库存(香港-日本-台湾)开17点增票	询价
深圳市科恒伟业电子有限公司	IPD65R600C6	INFINEON	2018+	TO252	6528	只做原装正品假一赔十!只要网上有上百分百有库存放心	询价
深圳市华来深电子有限公司	IPD65R600C6	INFINE0N	23+	TO-252	11846	一级代理商现货批发,原装正品,假一罚十	询价
深圳市华斯顿科技有限公司	IPD65R600C6	INFINEON	22+23+	TO252	72333	绝对原装正品现货,全新深圳原装进口现货	询价
深圳市向鸿伟业电子有限公司	IPD65R600C6	INFINEON	1845+	TO252	5790	只做原装!量大可以订货!特价支持实单!	询价
深圳市亚泰盈科电子有限公司	IPD65R600C6	INFINEON		SOT-252	30216	提供BOM表配单TEL:0755-83759919QQ:2355705587杜S	询价
中科航电(深圳)半导体技术有限公司	IPD65R600C6	InfineonTechnologies	19+	TO-252-3	56800	DPak(2Leads+Tab)	询价
深圳市百视威讯电子科技有限公司	IPD65R600C6		23+	N/A	46380	正品授权货源可靠	询价
深圳市赛芯源科技有限公司	IPD65R600C6	infineon	18+	TO-252	41200	原装正品,现货特价	询价
深圳兆威电子有限公司	IPD65R600C6	VB	2019	TO-252	55000	绝对原装正品假一罚十!	询价

更多IPD65R420CFDXT供应商更新时间2024-5-17 8:29:00

详细参数

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