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IPD60R600P6中文资料无锡固电数据手册PDF规格书
IPD60R600P6规格书详情
• DESCRITION
• Fast switching
• FEATURES
• Static drain-source on-resistance:
RDS(on)≤0.6Ω
• Enhancement mode:
• 100 avalanche tested
• Minimum Lot-to-Lot variations for robust device
performance and reliable operation
产品属性
- 型号:
IPD60R600P6
- 功能描述:
MOSFET 600V CoolMOS P6 MOSFET 600 Rds
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
24+ |
NA/ |
20650 |
原装现货,当天可交货,原型号开票 |
询价 | ||
Infineon/英飞凌 |
23+ |
PG-TO252-3 |
12700 |
买原装认准中赛美 |
询价 | ||
INFINEON |
16+ |
TO252 |
280 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
Infineon |
23+ |
PG-TO252-3 |
15500 |
英飞凌优势渠道全系列在售 |
询价 | ||
Infineon(英飞凌) |
2511 |
标准封装 |
7000 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
询价 | ||
INFINEON |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
询价 | ||
Infineon/英飞凌 |
24+ |
PG-TO252-3 |
25000 |
原装正品,假一赔十! |
询价 | ||
Infineon/英飞凌 |
1948+ |
TO252 |
6852 |
只做原装正品现货!或订货假一赔十! |
询价 | ||
Infineon/英飞凌 |
23+ |
PG-TO252-3 |
25630 |
原装正品 |
询价 | ||
INFINEON |
25+23+ |
TO-252 |
20614 |
绝对原装正品全新进口深圳现货 |
询价 |