IPD60R280P7

Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use

The 600V CoolMOS™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platfor; Efficiency \n • 600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G\n Ease-of-use \n • Integrated ESD diode from 180mN and above R DS(on)s\n• Integrated gate resistor R G\n• Rugged body diode\n• Wide portfolio in through hole and surface mount packages\n• Both standard grade and industrial ;

IPD60R280P7

丝印：60R280P7；Package：PG-TO252-3；600V CoolMOS짧 P7 Power Transistor

IPD60R280P7

N-Channel MOSFET Transistor

IPD60R280P7S

N-Channel MOSFET Transistor

IPD60R280P7S

丝印：60S280P7；Package：PG-TO252-3；600V CoolMOS짧 P7 Power Transistor