30V N-Channel MOSFET

Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Avalanche rated • Pb-free plating

文件：397.11 Kbytes 页数：8 Pages

EVVOSEMI

翊欧

N-Channel MOSFET Transistor

文件：334.68 Kbytes 页数：2 Pages

ISC

无锡固电

30V N-Channel MOSFET

Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Avalanche rated • Pb-free plating

文件：397.11 Kbytes 页数：8 Pages

EVVOSEMI

翊欧

OptiMOS?? Power-Transistor Features Fast switching MOSFET for SMPS

OptiMOS™3 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC for target applications • N-channel, logic level • Excellent gate charge x RDS(on)product (FOM) • Very low on-resistance RDS(on) • Avalanche rated

文件：526.25 Kbytes 页数：12 Pages

Infineon

英飞凌

N 沟道功率 MOSFET

极低的栅极和输出电荷，结合极低的导通状态电阻和小体积封装，使 OptiMOS™ 25V 成为要求较高的服务器、数据通信和通信电压调节器解决方案的最佳选择。OptiMOS™ 30V 产品专为满足笔记本电脑的电源管理需求而量身定制，可改善电磁干扰行为，以及延长电池寿命。可用于半桥配置（功率级 5x6） • 极低的栅极和输出电荷\n• 极低的导通状态电阻，小体积封装\n• 设计导入容易\n\n优势:\n• 延长电池寿命\n• 改进 EMI 表现，无需外部缓冲器网络\n• 节省成本\n• 节约空间 \n• 减少功率损耗;

Infineon

英飞凌