N-channel Enhancement Mode Power MOSFET

Features  VDS= 60V, ID= 50A RDS(ON)

文件：1.09099 Mbytes 页数：4 Pages

Bychip

百域芯

丝印：DPAK；Package：TO-252；N-Channel MOSFET Transistor

文件：337.26 Kbytes 页数：2 Pages

ISC

无锡固电

OptiMOS(TM)3 Power-Transistor

文件：222.45 Kbytes 页数：9 Pages

Infineon

英飞凌

N 沟道功率 MOSFET

OptiMOS™ 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices can be used for a broad range of industrial applications including motor control, solar micro inverter and f • Excellent gate charge x R DS(on) product (FOM)\n• Very low on-resistance R DS(on)\n• Ideal for fast switching applications\n• RoHS compliant - halogen free\n• MSL1 rated\n\n优势:\n• Highest system efficiency\n• Less paralleling required\n• Increased power density\n• System cost reduction\n• Very low;

Infineon

英飞凌