丝印：3N1012；Package：PG-TO263-3-2；OptiMOS-T Power-Transistor

Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • 100 Avalanche tested

文件：192.39 Kbytes 页数：9 Pages

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OptiMOS-T Power-Transistor

文件：192.67 Kbytes 页数：9 Pages

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OptiMOS -T Power-Transistor

文件：166.31 Kbytes 页数：9 Pages

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100 V、N 沟道、最大 11.3 mΩ、汽车 MOSFET、D2PAK、OptiMOS ™ -T

• N-channel - Enhancement mode\n • Automotive AEC Q101 qualified\n • MSL1 up to 260°C peak reflow\n • 175°C operating temperature\n • Green product (RoHS compliant)\n • 100% Avalanche tested\n\n优势:\n• highest current capability 180A\n • low switching and conduction power losses for high thermal ;

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英飞凌

100 V、N沟道、最大11.8 mΩ、汽车MOSFET、D2PAK、OptiMOS ™ -T

• N-channel - Enhancement mode\n • Automotive AEC Q101 qualified\n • MSL1 up to 260°C peak reflow\n • 175°C operating temperature\n • Green product (RoHS compliant)\n • 100% Avalanche tested\n\n优势:\n• highest current capability 180A\n • low switching and conduction power losses for high thermal ;

Infineon

英飞凌