首页 >IPB65R225C7>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
IPB65R225C7 | 650V CoolMOS??C7 Power Transistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies Features •IncreasedMOSFETdv/dtruggedness •BetterefficiencyduetobestinclassFOMRDS(on)*EossandRDS(on)*Qg | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | |
IPB65R225C7 | isc N-Channel MOSFET Transistor •DESCRIPTION •ProvideallbenefitsofafastswitchingsuperjunctionMOSFET offeringbetterefficiency,reducedgatecharge,easyimplementation andoutstandingreliability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.225Ω •Enhancementmode •FastSwitchingSpeed | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | |
N-ChannelMOSFETTransistor •DESCRITION •Fastswitching •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.225Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelMOSFETTransistor •DESCRIPTION •ProvideallbenefitsofafastswitchingsuperjunctionMOSFET offeringbetterefficiency,reducedgatecharge,easyimplementation andoutstandingreliability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.225Ω •Enhancementmode •FastSwitchingSpeed | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
IscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
MetalOxideSemiconductorFieldEffectTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
N-ChannelMOSFETTransistor •DESCRITION •Fastswitching •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.225Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
650VCoolMOS??C7PowerTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •IncreasedMOSFETdv/dtruggedness •IncreasedefficiencyduetobestinclassFOMRDS(on)*EossandRDS(o | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
650VCoolMOS??C7PowerTransistor 650VCoolMOS™C7PowerTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Applications PFCstagesandhardswitchingPWMstagesfore.g.Computing,Serve | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
N-ChannelMOSFETTransistor •DESCRIPTION •ProvideallbenefitsofafastswitchingsuperjunctionMOSFET offeringbetterefficiency,reducedgatecharge,easyimplementation andoutstandingreliability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.225Ω •Enhancementmode •FastSwitchingSpeed | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
2021+ |
SOT-263 |
16989 |
原装进口假一罚十 |
询价 | ||
Infineon/英飞凌 |
22+ |
PG-TO263-3 |
12992 |
只做原装现货工厂免费出样欢迎咨询订单 |
询价 | ||
INFINEON/英飞凌 |
21+23+ |
PG-TO263-3 |
7973 |
16年电子元件现货供应商 终端BOM表可配单提供样品 |
询价 | ||
Infineon(英飞凌) |
23+ |
TO-263 |
8498 |
支持大陆交货,美金交易。原装现货库存。 |
询价 | ||
23+ |
N/A |
49100 |
正品授权货源可靠 |
询价 | |||
英飞凌 |
21+ |
PG-TO263-3 |
6000 |
绝对原裝现货 |
询价 | ||
IR |
23+ |
TO263 |
90000 |
只做原厂渠道价格优势可提供技术支持 |
询价 | ||
INFINEON/英飞凌 |
22+ |
SOT-263 |
20000 |
保证原装正品,假一陪十 |
询价 | ||
Infineon(英飞凌) |
2112+ |
PG-TO263-3 |
115000 |
1000个/圆盘一级代理专营品牌!原装正品,优势现货, |
询价 | ||
IR |
TO263 |
198589 |
假一罚十原包原标签常备现货! |
询价 |
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