首页 >IPB60R950C6XT>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
N-ChannelMOSFETTransistor •DESCRITION •Fastswitching •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.95Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelMOSFETTransistor •DESCRIPTION •ProvideallbenefitsofafastswitchingsuperjunctionMOSwhilenot sacrificingeaseofuse •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.95Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustde | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOS™C6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresulting | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
600VCoolMOS??C6PowerTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
IscN-ChannelMOSFETTransistor •FEATURES •WithTO-220FPackage •DrainSourceVoltage- :VDSS=600V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.95Ω(Max) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplicati | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
600VCoolMOS??C6PowerTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
600VCoolMOS??C6PowerTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
IscN-ChannelMOSFETTransistor •FEATURES •WithTo-263(D2PAK)package •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
600VCoolMOS??C6PowerTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOS™C6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresulting | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOS™C6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresulting | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
600VCoolMOS??C6PowerTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
N-ChannelMOSFETTransistor •DESCRITION •Fastswitching •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.95Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
600VCoolMOS??C6PowerTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
600VCoolMOS??C6PowerTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
N-ChannelMOSFETTransistor •DESCRIPTION •ProvideallbenefitsofafastswitchingsuperjunctionMOSwhilenot sacrificingeaseofuse •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.95Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustde | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOS™C6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresulting | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
600VCoolMOS??C6PowerTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
MaterialContentDataSheet | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
MetalOxideSemiconductorFieldEffectTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon |
详细参数
- 型号：
IPB60R950C6XT
- 制造商：
Infineon Technologies AG
- 功能描述：
MOSFET N-CH 600V 4.4A TO263
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON |
23+ |
8000 |
只做原装现货 |
询价 | |||
INF |
23+ |
TO-263 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
INF |
22+ |
TO-263 |
50000 |
只做原装假一罚十,欢迎咨询 |
询价 | ||
IP |
23+ |
模块 |
320 |
全新原装正品,量大可订货!可开17%增值票!价格优势! |
询价 | ||
IP |
18+ |
2173 |
公司大量全新正品 随时可以发货 |
询价 | |||
IP |
2021+ |
模块 |
6430 |
原装现货/欢迎来电咨询 |
询价 | ||
COMVERTER |
18+ |
MODULE |
17 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
IP |
2015 |
模块 |
300 |
十七年VIP会员,诚信经营，一手货源，原装正品可零售！ |
询价 | ||
原厂 |
2023+ |
模块 |
600 |
专营模块,继电器,公司原装现货 |
询价 | ||
IP |
22+ |
NA |
1120 |
中国航天工业部战略合作伙伴行业领导者 |
询价 |
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