首页 >IPB60R280P6>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
IPB60R280P6 | Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •IncreasedMOSFETdv/dtruggedness •ExtremelylowlossesduetoverylowFOMRdson^QgandEoss •Veryhi | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 |  | |
IPB60R280P6 | isc N-Channel MOSFET Transistor •FEATURES •WithTO-263(D2PAK)packaging •Ultra-fastbodydiode •Highspeedswitching •Veryhighcommutationruggedness •Easytouse •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperationz •APPLICATIONS •Switchingapplication | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
IPB60R280P6 | Material Content Data Sheet | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | |
Material Content Data Sheet | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | ||
N-ChannelMOSFETTransistor •DESCRIPTION •ProvideallbenefitsofafastswitchingsuperjunctionMOSwhilenot sacrificingeaseofuse •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.28Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustde | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | ||
N-ChannelMOSFETTransistor •DESCRITION •Fastswitching •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤280mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | ||
MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •IncreasedMOSFETdv/dtruggedness •ExtremelylowlossesduetoverylowFOMRdson^QgandEoss •Veryhi | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | ||
IscN-ChannelMOSFETTransistor •FEATURES •WithTO-220Fpackage •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •Reducedswitchingandconductionlosses •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplica | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | ||
MetalOxideSemiconductorFieldEffectTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | ||
MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •IncreasedMOSFETdv/dtruggedness •ExtremelylowlossesduetoverylowFOMRdson^QgandEoss •Veryhi | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | ||
N-ChannelMOSFETTransistor •DESCRIPTION •ProvideallbenefitsofafastswitchingsuperjunctionMOSwhilenot sacrificingeaseofuse •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.28Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustde | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | ||
N-ChannelMOSFETTransistor •DESCRITION •Fastswitching •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤280mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | ||
MetalOxideSemiconductorFieldEffectTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | ||
MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •IncreasedMOSFETdv/dtruggedness •ExtremelylowlossesduetoverylowFOMRdson^QgandEoss •Veryhi | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | ||
MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •IncreasedMOSFETdv/dtruggedness •ExtremelylowlossesduetoverylowFOMRdson^QgandEoss •Veryhi | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
2021+ |
SOT-263 |
17064 |
原装进口假一罚十 |
询价 | ||
Infineon/英飞凌 |
22+ |
PG-TO263-3 |
32081 |
只做原装现货工厂免费出样欢迎咨询订单 |
询价 | ||
INFINEON/英飞凌 |
21+23+ |
PG-TO263-3 |
9654 |
16年电子元件现货供应商 终端BOM表可配单提供样品 |
询价 | ||
Infineon(英飞凌) |
23+ |
TO-263 |
8498 |
支持大陆交货,美金交易。原装现货库存。 |
询价 | ||
英飞凌 |
21+ |
PG-TO263-3 |
6000 |
绝对原裝现货 |
询价 | ||
INFINE0N |
21+ |
PG-TO263-3 |
32568 |
100%进口原装!长期供应!绝对优势价格(诚信经营 |
询价 | ||
Infineon(英飞凌) |
2112+ |
PG-TO263-3 |
115000 |
1000个/圆盘一级代理专营品牌!原装正品,优势现货, |
询价 | ||
INFINEON/英飞凌 |
21+ |
TO263 |
1574 |
询价 | |||
INFINEON/英飞凌 |
PG-TO263-3 |
198589 |
假一罚十原包原标签常备现货! |
询价 | |||
Infineon/英飞凌 |
21+ |
PG-TO263-3 |
8800 |
公司只作原装正品 |
询价 |
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