优化的超结 MOSFET，兼具高能效和易用性

The 600V CoolMOS™ P7 superjunction MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the CoolMOS™ 7th generation platform ensur Efficiency\n • 600V P7 enables excellent FOM RDS(on)xEoss and RDS(on)xQG\nEase-of-use\n • Integrated ESD diode from 180mN and above RDS(on)s\n• Integrated gate resistor RG\n• Rugged body diode\n• Wide portfolio in through hole and surface mount packages\n• Both standard grade and industrial grade pa;

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英飞凌

丝印：60R045P7；Package：PG-TO263-3；600V CoolMOS짧 P7 Power Transistor

文件：1.36606 Mbytes 页数：14 Pages

Infineon

英飞凌

600V CoolMOS짧 P7 Power Transistor

文件：1.3635 Mbytes 页数：14 Pages

Infineon

英飞凌

600V CoolMOS??P7 Power Transistor

文件：1.16789 Mbytes 页数：14 Pages

Infineon

英飞凌