OptiMOS3 Power-Transistor

文件：719.12 Kbytes 页数：11 Pages

Infineon

英飞凌

OptiMOSTM3 Power-Transistor

Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Halogen-free according to IEC61249-2-21 • Id

文件：427.94 Kbytes 页数：11 Pages

Infineon

英飞凌

OptiMOS3 Power-Transistor

文件：719.12 Kbytes 页数：11 Pages

Infineon

英飞凌

OptiMOSTM3 Power-Transistor

文件：764.46 Kbytes 页数：11 Pages

Infineon

英飞凌

OptiMOS3 Power-Transistor

文件：719.12 Kbytes 页数：11 Pages

Infineon

英飞凌

OptiMOS3 Power-Transistor

文件：719.12 Kbytes 页数：11 Pages

Infineon

英飞凌

20V-300V N-Channel Power MOSFET

Infineon's 250V OptiMOS™ products are performance leading benchmark technologies, perfectly suited for synchronous rectification in 48V systems, DC-DC converters, uninterruptable power supplies (UPS) and inverters for DC motor drives. • Industry’s lowest R DS(on)\n• Lowest Q g and Q gd\n• World’s lowest FOM RoHS comliant − halogen free MSL 1 rated\n\n优势:\n• Highest efficiency\n• Highest Power density\n• Lowest board space consumption\n• Minimal device paralleling required\n• System cost improvement\n• Enviromentally friendly\n• E;

Infineon

英飞凌