IPB200N15N3 G

20V-300V N-Channel Power MOSFET; • Excellent switching performance\n• World’s lowest R DS(on)\n• Very low Q g and Q gd\n• Excellent gate charge x R DS(on) product (FOM)\n• RoHS compliant-halogen free\n• MSL1 rated 2\n\n优势:\n• Environmentally friendly\n• Increased efficiency\n• Highest power density\n• Less paralleling required\n• Smallest board-space consumption\n• Easy-to-design products\n;

The 150V OptiMOS™ achieves a reduction in R DS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor. This drastic improvement opens new possibilities like moving from leaded packages to SMD packages or effectively replacing two old parts with one OptiMOS™ part.\n

IPB200N15N3G

丝印：D2PAK；Package：TO-263；Isc N-Channel MOSFET Transistor

•FEATURES •WithTo-263(D2PAK)package •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation •APPLICATIONS •Switchingapplications

IPB200N15N3

OptiMOS?? Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)

IPB200N15N3G

OptiMOS?? Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)

IPB200N15N3G

N-channel, normal level

IPB200N15N3G_15

N-channel, normal level