丝印：09N03LA；Package：P-TO263-3-2；OptiMOS 2 Power-Transistor

Type : IPB09N03LAG Package : PG-TO263-3-2 Marking : 09N03LA • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC for target applications • N-channel - Logic level • Excellent gate charge x RDS(on)product (FOM) • Very low on-resistance RDS(on) • Superior the

文件：347.27 Kbytes 页数：10 Pages

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OptiMOS짰2 Power-Transistor

Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1)for target applications • N-channel - Logic level • Excellent gate charge x RDS(on)product (FOM) • Very low on-resistance RDS(on) • Superior thermal resistance • 175 °C operating temperature • dv/dtrated

文件：276.86 Kbytes 页数：9 Pages

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OptiMOS 2Power-Transistor

Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1)for target applications • N-channel - Logic level • Excellent gate charge x RDS(on)product (FOM) • Very low on-resistance RDS(on) • Superior thermal resistance • 175 °C operating temperature • dv/dtrated

文件：281.87 Kbytes 页数：9 Pages

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OptiMOS 2Power-Transistor

Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1)for target applications • N-channel - Logic level • Excellent gate charge x RDS(on)product (FOM) • Very low on-resistance RDS(on) • Superior thermal resistance • 175 °C operating temperature • dv/dtrated

文件：281.87 Kbytes 页数：9 Pages

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OptiMOS®2 Power-Transistor

• Ideal for high-frequency dc/dc converters\n• Qualified according to JEDEC1)for target applications\n• N-channel - Logic level\n• Excellent gate charge x RDS(on)product (FOM)\n• Very low on-resistance RDS(on)\n• Superior thermal resistance\n• 175 °C operating temperature\n• dv/dtrated\n• Pb-free le;

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MOSFET N-CH 25V 50A D2PAK

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OptiMOS®2 Power-Transistor

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