IPB072N15N3 G

20V-300V N-Channel Power MOSFET; • Excellent switching performance\n• World’s lowest R DS(on)\n• Very low Q g and Q gd\n• Excellent gate charge x R DS(on) product (FOM)\n• RoHS compliant-halogen free\n• MSL1 rated 2\n\n优势:\n• Environmentally friendly\n• Increased efficiency\n• Highest power density\n• Less paralleling required\n• Smallest board-space consumption\n• Easy-to-design products\n;

The 150V OptiMOS™ achieves a reduction in R DS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor. This drastic improvement opens new possibilities like moving from leaded packages to SMD packages or effectively replacing two old parts with one OptiMOS™ part.\n

IPB072N15N3G

OptiMOS?? Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)

Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Idealforhigh-frequencyswitchingandsynchr

IPB072N15N3G

丝印：072N15N；Package：PG-TO263-3；3 Power-Transistor

Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Idealforhigh-frequencyswitchingandsynchr

IPB072N15N3-G

OptiMOS?? Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)

Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Idealforhigh-frequencyswitchingandsynchr

IPB072N15N3G

IPB072N15N3G

丝印：D2PAK；Package：TO-263；Isc N-Channel MOSFET Transistor

IPB072N15N3-G

OptiMOS 3 Power-Transistor