首页 >IPB011N04N>规格书列表

零件编号下载&订购功能描述制造商&上传企业LOGO

IPB011N04NF2S

StrongIRFETTM2 Power-Transistor

Features •Optimizedforwiderangeofapplications •N-channel,normallevel •100avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPB011N04NG

OptiMOS3 Power-Transistor

Features •MOSFETforORingandUniterruptiblePowerSupply •QualifiedaccordingtoJEDEC1)fortargetapplications •N-channel •Normallevel •Ultra-lowon-resistanceRDS(on) •Avalancherated •Pb-freeplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPB011N04L

OptiMOS3PowerTransistor

Features •MOSFETforORingandUninterruptiblePowerSupply •QualifiedaccordingtoJEDEC1)fortargetapplications •N-channel •Logiclevel •Ultra-lowon-resistanceRDS(on) •100Avalanchetested •pb-freeplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPB011N04LG

OptiMOS3PowerTransistor

Features •MOSFETforORingandUninterruptiblePowerSupply •QualifiedaccordingtoJEDEC1)fortargetapplications •N-channel •Logiclevel •Ultra-lowon-resistanceRDS(on) •100Avalanchetested •pb-freeplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

NTMYS011N04C

PowerMOSFET40V,12m,35A,SingleN?묬hannel

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NTMYS011N04CTWG

PowerMOSFET40V,12m,35A,SingleN?묬hannel

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NVLJWS011N04CL

MOSFET??Power,SingleN-Channel40V,11m,37A

Features •SmallFootprintforCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •WettableFlankOptionforEnhancedOpticalInspection •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NVMYS011N04C

MOSFET–Power,SingleN-Channel40V,12m,35A

Features •SmallFootprint(5x6mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •LFPAK4Package,IndustryStandard •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NVMYS011N04CTWG

MOSFET–Power,SingleN-Channel40V,12m,35A

Features •SmallFootprint(5x6mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •LFPAK4Package,IndustryStandard •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant

ONSEMION Semiconductor

安森美半导体安森美半导体公司

详细参数

  • 型号:

    IPB011N04N

  • 制造商:

    Infineon Technologies AG

供应商型号品牌批号封装库存备注价格
INFINEON
20+
TO-263-7
20000
原装正品现货
询价
Infineon(英飞凌)
23+
TO263
4524
原厂直供,支持账期,免费供样,技术支持
询价
INFINEON/英飞凌
2021+
SOT-263-7L
17683
原装进口假一罚十
询价
INENOI
20+
SOT263-7
82
全新原装,价格优势
询价
INFINEON/英飞凌
2024+实力库存
TO263
15
只做原厂渠道 可追溯货源
询价
INFINEON
21+
TO-263-7
6880
只做原装,质量保证
询价
INFINEON/英飞凌
21+
TO263
9800
只做原装正品假一赔十!正规渠道订货!
询价
Infineon(英飞凌)
22+
N/A
12000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
Infineon(英飞凌)
23+
NA
7000
原装正品!假一罚十!
询价
INFINEON
23+
TO263
4000
正规渠道,只有原装!
询价
更多IPB011N04N供应商 更新时间2024-5-25 9:02:00