IPA65R150CFD中文资料英飞凌数据手册PDF规格书

厂商型号	IPA65R150CFD
功能描述	Metal Oxide Semiconductor Field Effect Transistor
丝印标识	65F6150
封装外壳	PG-TO220FullPAK
文件大小	3.82385 Mbytes
页面数量	20 页
生产厂商	Infineon Technologies AG
企业简称	INFINEON【英飞凌】
中文名称	英飞凌科技股份公司官网
原厂标识
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-7-5 23:00:00
人工找货	IPA65R150CFD价格和库存，欢迎联系客服免费人工找货

Description

CoolMOS™ is a revolutionary technology for high voltage power

MOSFETS, designed according to the superjunction (SJ) principle and

pioneered by Infineon Technologies. 650V CoolMOS™M CFD2 series

combines the experience of the leading SJ MOSFET supplier with high

class innovation. The resulting devices provide all benefits of a fast

switching SJ MOSFET while offering an extremely fast and robust body

diode. This combination of extremely low switching, commutation and

conduction losses together with highest robustness make especially

resonant switching applications more reliable, more efficient, lighter and

cooler.

Features

• Ultra-fast body diode

• Very high commutation ruggedness

• Extremely low losses due to very low FOM Rdson*Qg and Eoss

Easy to use/drive

• Qualified for industrial grade applications according to JEDEC

(J-STD20 and JESD22)

• Pb-free plating, Halogen free for mold compound