首页 >IP210TB-LF>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
210WhIndustrialPowerStorageSystemwithLithium-IronPhosphateCell | ADVANTECHAdvantech Co., Ltd. 研华科技研华科技（中国）有限公司 | ADVANTECH | ||
210WhIntelligentPowerStorageSystem Features Containsenvironmentally-friendly,longlifecyclerechargeablebatteries 170WDCoutputforintegrationofvariousdevices Fanlessdesignforhospitalenvironment Swappablebatterypackdesignforquickandeasyreplacement 2VDCoutputwithsimultaneouspowersupport Sa | ADVANTECHAdvantech Co., Ltd. 研华科技研华科技（中国）有限公司 | ADVANTECH | ||
210WhIndustrialPowerStorageSystemwithLithium-IronPhosphateCell | ADVANTECHAdvantech Co., Ltd. 研华科技研华科技（中国）有限公司 | ADVANTECH | ||
210WhIntelligentPowerStorageSystem Features Containsenvironmentally-friendly,longlifecyclerechargeablebatteries 170WDCoutputforintegrationofvariousdevices Fanlessdesignforhospitalenvironment Swappablebatterypackdesignforquickandeasyreplacement 2VDCoutputwithsimultaneouspowersupport Sa | ADVANTECHAdvantech Co., Ltd. 研华科技研华科技（中国）有限公司 | ADVANTECH | ||
210WhIntelligentPowerStorageSystem Features Containsenvironmentally-friendly,longlifecyclerechargeablebatteries 170WDCoutputforintegrationofvariousdevices Fanlessdesignforhospitalenvironment Swappablebatterypackdesignforquickandeasyreplacement 2VDCoutputwithsimultaneouspowersupport Sa | ADVANTECHAdvantech Co., Ltd. 研华科技研华科技（中国）有限公司 | ADVANTECH | ||
OCXOSpecification | IQD IQD Frequency Products Ltd | IQD | ||
VCTCXOSpecification | IQD IQD Frequency Products Ltd | IQD | ||
PowerMOSFET(Vdss=200V,Rds(on)=1.5ohm,Id=0.60A) DESCRIPTION ThirdGenerationPowerMOSFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4pinDIPpackageisalowcostmachine-insertablecasestylewhichcanbestackedin | IRF International Rectifier | IRF | ||
0.6A,200V,1.500Ohm,N-ChannelPowerMOSFET ThisadvancedpowerMOSFETisdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingc | Intersil Intersil Corporation | Intersil | ||
0.6AAND0.45A,150VAND200V,1.5AND2.4OHM,N-CHANNELPOWERMOSFETS TheseareadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switching | HARRIS Harris Corporation | HARRIS |
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