首页 >IP113F-LF>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
Managed10/100Base-TX/FXMediaConverter | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | etc2 | ||
MiniatureIntegratedPowerMonitor | JDSUJDS Uniphase Corporation 捷迪讯 | JDSU | ||
MiniatureIntegratedPowerMonitor | JDSUJDS Uniphase Corporation 捷迪讯 | JDSU | ||
POWER-MOSFETFIELDEFFECTPOWERTRANSISTOR POWER-MOSFETFIELDEFFECTPOWERTRANSISTOR ThisseriesofN-ChannelEnhancement-modePowerMOSFETutilizesGEsadvancedPowerDMOStechnologytoachievelowon-resistancewithexcellentdeviceruggednessandreliability. Thisdesignhasbeenoptimizedtogivesuperiorperformanceinmostswitchi | GESS GE Solid State | GESS | ||
CompactPlasticPackage | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PowerMOSFET FEATURES •Forautomaticinsertion •Compactplasticpackage •Endstackable •Fastswitching •Lowdrivecurrent •Easilyparalleled •Excellenttemperaturestability •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION TheHVMDIPt | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
MultipleSmall-SignalTransistors | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | Motorola | ||
PowerMOSField-EffectTransistors N-ChannelEnhancement-ModePowerField-EffectTransistors Features •SOAisPowerDissipationLimited •NanosecondSwitchingSpeeds •LinearTransferCharacteristics •HighInputImpedance •Majoritycarrierdevice | GESS GE Solid State | GESS | ||
GENERALPURPOSEDIODES | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI |
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