首页 >IMX322>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
microPower,Single-Supply,CMOSINSTRUMENTATIONAMPLIFIER | BURR-BROWN Burr-Brown (TI) | BURR-BROWN | ||
INSTRUMENTATIONAMPLIFIER | TI1Texas Instruments 德州仪器美国德州仪器公司 | TI1 | ||
microPower,Single-Supply,CMOSNTATIONAMPLIFIER | TITexas Instruments 德州仪器美国德州仪器公司 | TI | ||
microPower,Single-Supply,CMOSINSTRUMENTATIONAMPLIFIER FEATURES LOWCOST LOWQUIESCENTCURRENT:40μA/channel ShutDown: | TI2Texas Instruments 德州仪器美国德州仪器公司 | TI2 | ||
microPower,Single-Supply,CMOSNTATIONAMPLIFIER | TITexas Instruments 德州仪器美国德州仪器公司 | TI | ||
microPower,Single-Supply,CMOSINSTRUMENTATIONAMPLIFIER FEATURES LOWCOST LOWQUIESCENTCURRENT:40μA/channel ShutDown: | TI2Texas Instruments 德州仪器美国德州仪器公司 | TI2 | ||
N-CHANNELPOWERMOSFETS
| SamsungSamsung semiconductor 三星三星半导体 | Samsung | ||
2.8Aand3.3A,350Vand400V,1.8and2.5Ohm,N-ChannelPowerMOSFETs Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplica | Intersil Intersil Corporation | Intersil | ||
N-ChannelPowerMOSFETs,3.0A,350-400V Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighvoltage,highspaedapplications,suchasoff-lineswitchingpowersupplies,ACandDCmotorcontrols,relayandsolenoiddriversanddriversandotherpulsecircuits. •LowRDs(on) •VGS | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
N-ChannelPowerMOSFETs | ARTSCHIP ARTSCHIP ELECTRONICS CO.,LMITED. | ARTSCHIP |
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