丝印：12M1H007；Package：PG-TO247-3-STD-N2.5；CoolSiC??1200 V SiC Trench MOSFET : silicon carbide MOSFET

Features • VDSS = 1200 V at Tvj = 25°C • IDCC = 225 A at Tvj = 25°C • RDS(on) = 7 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Benchmark gate threshold voltage, VGS(th) = 4.2 V • Robust against parasitic turn on, 0 V turn-off gate voltage can be applied • Robust body diode for

文件：1.32098 Mbytes 页数：17 Pages

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CoolSiC??1200 V SiC Trench MOSFET : silicon carbide MOSFET

Features • VDSS = 1200 V at Tvj = 25°C • IDCC = 225 A at Tvj = 25°C • RDS(on) = 7 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Benchmark gate threshold voltage, VGS(th) = 4.2 V • Robust against parasitic turn on, 0 V turn-off gate voltage can be applied • Robust body diode for

文件：1.32098 Mbytes 页数：17 Pages

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丝印：12M1H014；Package：PG-TO247-3-STD-N2.5；CoolSiC??1200 V SiC Trench MOSFET : silicon carbide MOSFET

Features • VDSS = 1200 V at Tvj = 25°C • IDCC = 127 A at Tvj = 25°C • RDS(on) = 14 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Short circuit withstand time 3 μs • Benchmark gate threshold voltage, VGS(th) = 4.2 V • Robust against parasitic turn on, 0 V turn-off gate voltage c

文件：1.2934 Mbytes 页数：17 Pages

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丝印：12M1H020；Package：PG-TO247-3-STD-N2.5；CoolSiC??1200 V SiC Trench MOSFET : silicon carbide MOSFET

Features • VDSS = 1200 V at Tvj = 25°C • IDCC = 98 A at Tvj = 25°C • RDS(on) = 19 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Short circuit withstand time 3 μs • Benchmark gate threshold voltage, VGS(th) = 4.2 V • Robust against parasitic turn on, 0 V turn-off gate voltage ca

文件：1.30857 Mbytes 页数：17 Pages

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SiC N-Channel MOSFET

FEATURES ·High Blocking Voltage with Low On-Resistance ·RDS(on)= 19mΩ（TYP.）@VGS=18V Tj=25℃ ·Very low switching losses APPLICATIONS ·Solar power optimizer ·Online UPS/Industrial UP ·DC-DC Converters ·String inverters

文件：347.85 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：12M1H040；Package：PG-TO247-3-STD-N2.5；CoolSiC??1200 V SiC Trench MOSFET : silicon carbide MOSFET

Features • VDSS = 1200 V at Tvj = 25°C • IDCC = 55 A at Tvj = 25°C • RDS(on) = 39 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Short circuit withstand time 3 µs • Benchmark gate threshold voltage, VGS(th) = 4.2 V • Robust against parasitic turn on, 0 V turn-off gate voltage ca

文件：1.38658 Mbytes 页数：17 Pages

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SiC N-Channel MOSFET

FEATURES ·Very low switching losses ·Wide gate-source voltage range ·Efficiency improvement APPLICATIONS ·Solar Inverters ·Industrial UPS ·Industrial SMPS ·Charger

文件：348.75 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：12M1H030；Package：PG-TO247-3；CoolSiC??1200V SiC Trench MOSFET Silicon Carbide MOSFET

文件：1.18024 Mbytes 页数：17 Pages

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丝印：120M1045；Package：PG-TO247-3；CoolSiC??1200V SiC Trench MOSFET Silicon Carbide MOSFET

文件：1.38579 Mbytes 页数：17 Pages

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CoolSiC??1200V SiC Trench MOSFET Silicon Carbide MOSFET

文件：1.38579 Mbytes 页数：17 Pages

Infineon

英飞凌