IM29LV001T中文资料etc未分类制造商数据手册PDF规格书

[Integrated Memory Technologies, Inc.]

General Descriptions

The IM29LV001T/B is a 1 Mega-bit, 5V-only page erasable flash memory organized as 128K X 8 bits.It is manufactured with IMT’s proprietary double metal, 0.40 µm CMOS flash technology. High performance cell design and advanced process technology attain better reliability, manufacturability, circuit performance and future scaleability than other alternative approaches. Fast, self-timed program/erase operations are made possible with an innovative cell and array architecture which is free from the over-erase problem of the traditional stacked-gate structures.

Features:

● 0.40 µm, triple-poly double-metal CMOS process

● Single power supply operation

3.3V ± 10 for both read and write

● High endurance

> 10,000 program/erase cycles

● Fast read access time

70 and 90 ns

● Single page erasability for optimal data alterability

Page size: 512 bytes

● Hardwired data protection

Inhibits program and erase operations of the top (IM29LV001T) or bottom (IM29LV001B) 32 pages of the array for false write and virus prevention.

● Flexible boot block configurability

● Fast program and erase operations:

Byte program : < 35 µsec typical

Page erase : < 7 msec typical

Chip erase : < 2 sec typical

● Self-timed program/erase operations with end-of-cycle detection

Data# Polling and Toggle Bit

● Inadvertent write protection

Glitch filtering for WE# and CE#

Low Vcc (< 2.2 V ) write inhibit

Hardwired data protection

● Low Icc for power conservation

Read: 6 ma typical

Write: 10 ma typical

Stand-by: 10 µA typical

● Compatible with JEDEC byte wide pinout and single-supply flash command standards

● Package types:

32-pin PLCC, TSOP and PDIP

Others available upon request