IKD06N60-RF资料datasheet下载贸易商英飞凌-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
06N60E	文件：561.49 Kbytes Page：5 Pages	N-CHANNELSILICONPOWERMOSFET Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.0±0.5V) Highavalanchedurability Applica	FujiFUJI CORPORATION 株式会社ＦＵＪＩ	Fuji
AIHD06N60R	文件：1.92413 Mbytes Page：16 Pages	IGBTwithintegrateddiodeinpackagesofferingspacesavingadvantage	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
AIHD06N60RF	文件：1.74081 Mbytes Page：16 Pages	IGBTwithintegrateddiodeinpackagesofferingspacesavingadvantage	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
CJP06N60	文件：227.22 Kbytes Page：4 Pages	PowerfiledEffectTransistor FEATURES ◆RobustHighVoltageTermination ◆AvalancheEnergySpecified ◆Source-to-DrainDiodeRecoveryTimeComparabletoa DiscreteFastRecoveryDiode ◆DiodeisCharacterizedforUseinBridgeCircuits ◆IDSSandVDS(on)SpecifiedatElevatedTemperature	JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd	JIANGSU
CMT06N60	文件：193.63 Kbytes Page：6 Pages	POWERFIELDEFFECTTRANSISTOR GENERALDESCRIPTION ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyeffic	CHAMPChampion Microelectronic Corp. 虹冠虹冠电子	CHAMP
CMT06N60	文件：246.73 Kbytes Page：6 Pages	POWERFIELDEFFECTTRANSISTOR	CHAMPChampion Microelectronic Corp. 虹冠虹冠电子	CHAMP
CMT06N60	文件：191.5 Kbytes Page：6 Pages	POWERFIELDEFFECTTRANSISTOR	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
EMD06N60A	文件：199.56 Kbytes Page：6 Pages	N?륝hannelLogicLevelEnhancementModeFieldEffectTransistor ProductSummary: BVDSS600V RDSON(MAX.)1.55Ω ID6A UIS,100Tested Pb‐FreeLeadPlating&HalogenFree	EXCELLIANCEExcelliance MOS Corp. 杰力科技杰力科技股份有限公司	EXCELLIANCE
EMD06N60CS	文件：200.92 Kbytes Page：5 Pages	N?륝hannelLogicLevelEnhancementModeFieldEffectTransistor ProductSummary: BVDSS600V RDSON(MAX.)1.55Ω ID6A UIS,100Tested Pb‐FreeLeadPlating&HalogenFree	EXCELLIANCEExcelliance MOS Corp. 杰力科技杰力科技股份有限公司	EXCELLIANCE
EMD06N60F	文件：177.2 Kbytes Page：5 Pages	N?륝hannelLogicLevelEnhancementModeFieldEffectTransistor ProductSummary: BVDSS600V RDSON(MAX.)1.55Ω ID6A UIS,100Tested Pb‐FreeLeadPlating&HalogenFree	EXCELLIANCEExcelliance MOS Corp. 杰力科技杰力科技股份有限公司	EXCELLIANCE
FMC06N60ES	文件：332.86 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=6A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconve	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FMC06N60ES	文件：548.64 Kbytes Page：5 Pages	N-CHANNELSILICONPOWERMOSFET	FujiFUJI CORPORATION 株式会社ＦＵＪＩ	Fuji
FMI06N60ES	文件：547.29 Kbytes Page：5 Pages	N-CHANNELSILICONPOWERMOSFET	FujiFUJI CORPORATION 株式会社ＦＵＪＩ	Fuji
FMP06N60E	文件：561.49 Kbytes Page：5 Pages	N-CHANNELSILICONPOWERMOSFET Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.0±0.5V) Highavalanchedurability Applica	FujiFUJI CORPORATION 株式会社ＦＵＪＩ	Fuji
FMP06N60ES	文件：537.45 Kbytes Page：5 Pages	N-CHANNELSILICONPOWERMOSFET Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.7±0.5V) Highavalanchedurability Applica	FujiFUJI CORPORATION 株式会社ＦＵＪＩ	Fuji
FMP06N60ES	文件：305.77 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FMV06N60E	文件：529.48 Kbytes Page：5 Pages	N-CHANNELSILICONPOWERMOSFET Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.0±0.5V) Highavalanchedurability Applica	FujiFUJI CORPORATION 株式会社ＦＵＪＩ	Fuji
FMV06N60ES	文件：547.53 Kbytes Page：5 Pages	N-CHANNELSILICONPOWERMOSFET Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.7±0.5V) Highavalanchedurability Applica	FujiFUJI CORPORATION 株式会社ＦＵＪＩ	Fuji
FTA06N60C	文件：54.71 Kbytes Page：6 Pages	N-ChannelEnhancement InPowerProductLines	ETC1List of Unclassifed Manufacturers 未分类制造商	ETC1
H06N60	文件：71.89 Kbytes Page：6 Pages	N-ChannelPowerFieldEffectTransistor Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficient	HSMC 华昕	HSMC

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供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市宏捷佳电子科技有限公司	IKD06N60-RF	INFINEON	23+	TO-252	12300	全新原装真实库存含13点增值税票!	询价
深圳市百视威讯电子科技有限公司	IKD06N60-RF		23+	N/A	90250	正品授权货源可靠	询价
深圳市国宇半导体科技有限公司	IKD06N60-RF	INFINEON/英飞凌	23+	TO-252	10000	公司只做原装正品	询价
深圳市河锋鑫科技有限公司	IKD06N60-RF	Infineon/英飞凌	22+	TO-252	6000	十年配单,只做原装	询价
易创佳业科技（深圳）有限公司	IKD06N60-RF	Infineon/英飞凌	23+	TO-252	6000	原装正品，支持实单	询价
深圳市跃创芯科技有限公司	IKD06N60-RF	Infineon/英飞凌	22+	TO-252	25000	只做原装进口现货,专注配单	询价
深圳市能元时代电子有限公司	IKD06N60-RF	INFINEON	23+	TO-252	16617	##公司主营品牌长期供应100%原装现货可含税提供技术	询价
深圳市创新迹电子有限公司	IKD06N60-RF	Infineon/英飞凌	22+	TO-252	25000	只做原装进口现货,专注配单	询价
深圳市惊羽科技有限公司	IKD06N60-RF	INFINEON-英飞凌	24+25+/26+27+	TO-252-3	78800	一一有问必回一特殊渠道一有长期订货一备货HK仓库	询价
深圳市安富世纪电子有限公司	IKD06N60-RF	INFINEON	23+	TO-252	8000	只做原装现货	询价

更多IKD06N60-RF供应商更新时间2024-5-25 15:30:00

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