| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
18A,200V,0.180Ohm,N-ChannelPowerMOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchas | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipation | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
iscN-ChannelMOSFETTransistor DESCRIPTION •DrainCurrent–ID=18A@TC=25℃ •DrainSourceVoltage- :VDSS=200V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.18Ω(Max) •FastSwitchingSpeed •LowDriveRequirement APPLICATIONS •Designedforlowvoltage,highspeedpowerswitching applicationssuch | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelEnhancementModePOWERMOSFET Features: *SuperHighDenseCellDesignForLowRDS(ON) RDS(ON) | WEITRON Weitron Technology | WEITRON | ||
POWERTRMOSFET GENERALDESCRIPTION ThisPowerMOSFETisdesignedforlowvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,converters,solenoidandrelaydrivers. FEATURES ◆SiliconGateforFastSwitchingSpeeds ◆LowRDS(on)toMinimizeOn-Losses.SpecifiedatElevated Temp | SUNTAC Suntac Electronic Corp. | SUNTAC | ||
TECHNICALSPECIFICATIONSOFN-CHANNELPOWERMOSFET Description Designedforlowvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,converters,solenoidandrelaydrivers. Features *RepetitiveAvalancheRated *FastSwitching *EaseofParalleling *SimpleDriveRequirements | DCCOM Dc Components | DCCOM | ||
NCHANNELENHANCEMENTMODEPOWERMOSTRANSISTORS FEATURE NchannelinaplasticTO220package. Theyareintendedforuseinhighspeedpowerswitching,low voltage,relaydriversandgeneralpurposeswitching applications. DC-DC&DC-ACconvertersfortelecom,industrialandlighting equipment. CompliancetoRoHS. | COMSET Comset Semiconductor | COMSET | ||
18A200VNCHANNELPOWERMOSFET GENERALDESCRIPTION ThisPowerMOSFETisdesignedforlowvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,converters,solenoidandrelaydrivers. FEATURES ◆SiliconGateforFastSwitchingSpeeds ◆LowRDS(on)toMinimizeOn-Losses.SpecifiedatElevated Temp | FCIFirst Components International 戈采戈采企业股份有限公司 | FCI | ||
N-ChannelMOSFETusesadvancedtrenchtechnology Description： ThisN-ChannelMOSFETusesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(on)withlowgatecharge.Itcanbeusedinawidevarietyofapplications. Features： 1)VDS=200V,ID=18A,RDS(ON) | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半导体有限公司 | DOINGTER | ||
PowerMOSFETDynamicdV/dtRatingRepetitiveAvalancheRatedFastSwitching DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipation | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
22+ |
TO-220 |
6000 |
终端可免费供样,支持BOM配单 |
询价 | ||
IR |
23+ |
TO-220 |
8000 |
只做原装现货 |
询价 | ||
IR |
23+ |
TO-220 |
7000 |
询价 | |||
VISHAY |
12+ |
TO-252 |
15000 |
全新原装,绝对正品,公司现货供应。 |
询价 | ||
VISHAY/威世 |
24+ |
TO-252 |
30000 |
只做正品原装现货 |
询价 | ||
IRF |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
IFM |
23+ |
SENSOR |
128 |
全新、原装 |
询价 | ||
ST意法 |
20+ |
LGA12 |
17000 |
加速度计,只做全新原装 |
询价 | ||
ST/意法 |
23+ |
VFLGA-12221 |
3000 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
询价 | ||
STMICROELECTRONICS |
24+ |
con |
35960 |
查现货到京北通宇商城 |
询价 |
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